SOT12 Search Results

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

BFQ108

Abstract: BFQ10 SOT122A 45005B
Contextual Info: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of DFN1212-6 package SOT1229 1.5 1.3 0.15 0.35 6x 0.15 0.3 0.25 (6x) 0.4 0.15 1.4 1.05 0.2 (6x) 0.84 0.94 1.04 0.4 0.35 (6x) solder lands 0.3 (6x) solder paste occupied area solder resist

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1239B D F A 3 L D D1 c U1 1 4 5 α H U2 Z Z1 6 2 b 7 w2 b1 E E1 5 D Q 10 mm scale Dimensions Unit 1 A max 4.75 nom min 3.45 mm b b1 c D D1 E F E1 H L Q U1 U2 1.83 12.83 0.20 20.02 19.96 9.53

Contextual Info: Package outline XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1.0 x 0.35 mm 1 SOT1202 b 3 2 4x (2) L L1 e 6 5 4 e1 e1 (6×)(2) A1 A D E terminal 1 index area 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b D E e e1 L L1 max 0.35 0.04 0.20 1.05 1.05

Contextual Info: Package outline Plastic single-ended multi-chip package; 6 interconnections; 3 in-line leads SOT1288 E section A-A HE1 B 1 , r L1 C center of reading point K1 0.2 B 0.2 C (1), r bp1 Q D L (1) (1) HE D1 A A pin 1 index A (1) L2 0.4 B b e Q K2 HE2 5 b bp1 c

Contextual Info: LF PA K5 6D SOT1205 LFPAK56D; Reel pack, SMD, 7" Q1/T1 Standard product orientation Orderable part number ending, 115 or X Ordering code 12NC ending 115 Rev. 1 — 13 August 2013 Packing information 1. Packing method Printed plano box Barcode label Reel

Contextual Info: Package outline XSON6: plastic very thin small outline package; no leads; 6 terminals; body 1.1 x 0.9 x 0.47 mm shape optional 6x A D SOT1230 e 3 4 e1 E v e1 6 1 pin 1 index area pin 1 index area A1 B y v y1 C A A B A B b (6×) L (6×) C shape optional (4×)

Contextual Info: 23A T1 SO SOT123A CRFM4; blister pack packing method; standard product orientation 12NC ending 112 Rev. 1 — 11 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label

Contextual Info: SOT1202 Reversed product orientation 12NC ending 132. Rev. 02 — 27 July 2011 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT1202 132 180 x 8

Contextual Info: High PSRR LDOs Dual Channel LDOs with High PSRR Performance Package DFN1612-8 SOT1225 LD6935 Series Size (mm) 1.6 x 1.2 x 0.4 mm Ptot @ °C (mW) VIN (V) 600 Quiescent Output PSRR @ current noise typ 1 kHz (µA) * (µVrms) (dB) 1.75 5.5 30 50 80 IOUT (mA)

Contextual Info: Package outline Plastic earless flanged cavity package; 6 leads SOT1275-1 D F A 7 w1 D1 L U1 b1 B v B A c H1 5 1 2 6 U2 H E1 E A 3 4 b Q e w2 B 5 10 mm scale Dimensions mm dimensions are derived from the original inch dimensions Unit mm A max 4.01 nom min 3.40

Contextual Info: SOT1203 Standard product orientation 12NC ending 115 Rev. 01 — 28 July 2011 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT1203 115 180 x 8

Contextual Info: Package outline XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.35 x 1.0 x 0.35 mm SOT1203 b 1 2 3 4x (2) 4 L L1 e 8 7 6 e1 e1 5 e1 (8×)(2) A1 A D E terminal 1 index area 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b D E e e1 L

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

Contextual Info: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated

BFR94

Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Contextual Info: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

SOT128

Abstract: BFQ262 BFQ265 BFQ268 X3A-BFQ268
Contextual Info: bb53^31 Philips Sem iconductors 0032211 Em ^BAPX Product specification NPN 1 GHz video transistor crystal X3A-BFQ268 b^E T> N AMER P H I L I P S / D I S C RE TE DESCRIPTION M ECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SO T172). Crystals are supplied

npn transistors, video amplifiers

Abstract: ph2369 BFV421 1024 transistor BFV469 BFV420 BFQ235A BFQ252 cascode BFQ251
Contextual Info: Philips Semiconductors Video Transistors and Modules for Monitors Line-ups WIDEBAND TRANSISTORS FOR VIDEO OUTPUT AMPLIFIERS IN MONITORS - DEVICE USAGE IC max. mA SOT54 (TO-92) SOT32 (TO-126) SOT128B (TO-202) SOT223 150 BFQ131 − − BFG35 500 BFQ161 BFQ162

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench