SOT1121A Search Results

Contextual Info: Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 2 1 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 5 Dimensions Unit 1 mm 10 mm scale A max 4.75 nom min 3.45 b 3.94 c D D1 e 0.18 20.02 19.96 E E1 F H H1 p 9.53 9.53 1.14 19.94 12.83 3.38

rf power transistors

Abstract: SOT539A SOT113 SOT1130A SOT1121A SOT922-1 SOT1135A sot1244c SOT1110B
Contextual Info: Ceramic packages for RF Power Transistors 1 SOT467B SOT467C SOT1135B SOT1135C SOT1130A SOT1130B SOT1135A SOT1135D SOT1120A SOT1120B SOT1121A SOT1121B SOT1121C SOT1121D SOT1112A SOT1112B Ceramic packages for RF Power Transistors (2) SOT1110A SOT1110B SOT1117A

UT-141C-25-TP

Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

BLF7G20L-90P

Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF647P

Abstract: 130005 power transistor
Contextual Info: BLF647P; BLF647PS Broadband power LDMOS transistor Rev. 1 — 3 August 2012 Objective data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

sot1121a

Abstract: J226 SMD
Contextual Info: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance

Contextual Info: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: BLF6G27L-40P; BLF6G27LS-40P Power LDMOS transistor Rev. 1 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

UT-090C-25

Abstract: BLF647P 130005 power transistor
Contextual Info: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

QUBiC4X

Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
Contextual Info: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

BLF7G22LS-100P

Contextual Info: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

Contextual Info: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 2 — 10 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.

907 TRANSISTOR smd

Contextual Info: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 — 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

Contextual Info: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance

BLF6G13L

Abstract: UT-141C-25-TP
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

sot979

Contextual Info: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)

Contextual Info: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

J226 SMD

Abstract: 800B RF35
Contextual Info: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 1 — 1 April 2011 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance

W13B

Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s