SOT-23-5 MARKING TF Search Results

TN2106ND

Contextual Info: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3

SI2304DS marking code SOT-23

Abstract: A4* marking code A4 MARKING CODE
Contextual Info: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

Contextual Info: Product specification MGSF2N02EL Power MOSFET 2.8 A, 20 V RDS on = 85 mW (max) 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

Contextual Info: Product specification NTR4501N Power MOSFET V BR DSS RDS(on) TYP ID MAX (Note 1) 70 mW @ 4.5 V 3.6 A 85 mW @ 2.5 V 3.1 A 20 V, 3.2 A, Single N−Channel, SOT−23 20 V Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching

m6g transistors marking code

Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

MGSF1N02LT1

Abstract: MGSF1N02LT3 sot-23 Marking N2
Contextual Info: MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

MMBF0202PLT1

Contextual Info: MMBF0202PLT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are

BSS84LT1

Contextual Info: BSS84LT1 Preferred Device Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

MGSF1N02LT1

Abstract: MGSF1N02LT1G MGSF1N02LT3 MGSF1N02LT3G sot-23 Marking N2 w 07 sot23
Contextual Info: MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

sot-23 marking NE

Abstract: 211ne MGSF1N02ELT1 MGSF1N02ELT3 N mosfet sot-23
Contextual Info: MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

NTR1P02LT1G

Abstract: NTR1P02LT1 NTR1P02LT3 NTR1P02LT3G
Contextual Info: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

NVR1P02T1G

Contextual Info: NTR1P02T1, NVR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency • • • • • and Extends Battery Life RDS on = 0.180 W, VGS = −10 V RDS(on) = 0.280 W, VGS = −4.5 V

MMBT2222ALT1G

Abstract: m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol

Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

MMBT2222LT1G

Abstract: MMBT2222ALT1G m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G 1P SOT-23
Contextual Info: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G

RG 701

Abstract: NTR1P02T1 NTR1P02T3
Contextual Info: NTR1P02T1 Power MOSFET −20 V, −1 A, P−Channel SOT−23 Package Features • Ultra Low On−Resistance Provides Higher Efficiency http://onsemi.com V BR DSS RDS(on) TYP ID MAX −20 V 148 mW @ −10 V −1.0 A P−Channel D Applications • • • •

sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

NVTR01P02LT1G

Abstract: NVTR01P02
Contextual Info: NTR1P02LT1, NVTR01P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

MGSF2N02EL

Abstract: MGSF2N02ELT1 MGSF2N02ELT3 sot-23 Marking MC
Contextual Info: MGSF2N02EL Power MOSFET 2.8 Amps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. http://onsemi.com

MVSF2N02EL

Abstract: MVSF2N02ELT1G
Contextual Info: MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

Contextual Info: TLV700xx www.ti.com SLVSA00D – SEPTEMBER 2009 – REVISED NOVEMBER 2012 200-mA, Low-IQ, Low-Dropout Regulator for Portable Devices FEATURES DESCRIPTION • Very Low Dropout: – 43 mV at IOUT = 50 mA, VOUT = 2.8 V – 85 mV at IOUT = 100 mA, VOUT = 2.8 V

A114

Abstract: NL27WZ04 NL27WZ14
Contextual Info: NL27WZ14 Dual Schmitt−Trigger Inverter http://onsemi.com MARKING DIAGRAMS 6 6 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but

LP2301LT1G

Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance