SI2304DS |
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Philips Semiconductors
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N-channel enhancement mode field-effect transistor |
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PDF
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Si2304DS |
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Toshiba
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Power MOSFETs Cross Reference Guide |
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PDF
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Si2304DS |
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Vishay
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Transistor Mosfet N-CH 30V 2.5A 3TO-236 |
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PDF
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Si2304DS |
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Vishay Intertechnology
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N-Channel 30 V (D-S) MOSFET |
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SI2304DS,215 |
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NXP Semiconductors
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V190@4.5V mOhm; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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PDF
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SI2304DS/DG,215 |
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NXP Semiconductors
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SI2304DS/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel |
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Original |
PDF
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Si2304DS SPICE Device Model |
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Vishay
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N-Channel 30-V (D-S) MOSFET |
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Original |
PDF
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Si2304DS-T1 |
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Vishay
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Transistor Mosfet N-CH 30V 2.5A 3TO-236 REEL |
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Original |
PDF
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SI2304DS-T1 |
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Vishay Intertechnology
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N-Channel Enhancement-Mode Transistor |
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Original |
PDF
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SI2304DST/R |
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NXP Semiconductors
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@10V190@4.5V mOhm; VDSmax: 30 V |
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Original |
PDF
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