SOT-23 MARKING 2A Search Results
SOT-23 MARKING 2A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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SOT-23 MARKING 2A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER |
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OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA | |
2AX sot-23
Abstract: marking 2AX sot-23 MARKING 2Ax 2A MARKING SOT23 MARKING 2A MARK 2A marking 2A sot23
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Z02W2 OT-23 2AX sot-23 marking 2AX sot-23 MARKING 2Ax 2A MARKING SOT23 MARKING 2A MARK 2A marking 2A sot23 | |
MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
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OCR Scan |
OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT591 SOT-23 TRANSISTOR PNP FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol |
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OT-23 FMMT591 OT-23 -500mA -500mA, -50mA -100mA -50mA, 100MHz | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol |
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OT-23 OT-23 FMMT491 | |
FMMT591
Abstract: power ic 5v 1A
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OT-23 FMMT591 OT-23 -500mA -500mA, -50mA -100mA -50mA, 100MHz FMMT591 power ic 5v 1A | |
FMMT491
Abstract: 491 marking transistor Marking 491 power ic 5v 1A
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OT-23 OT-23 FMMT491 500mA 500mA 100mA 100MHz FMMT491 491 marking transistor Marking 491 power ic 5v 1A | |
MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
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OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23 | |
FMMT3903
Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 FMMT3903 BCW33 | |
bt 44aContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2305 P-Channel 8-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5 |
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OT-23 CJ2305 OT-23 CJ2305 bt 44a | |
FMMT2222A
Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 FMMT2222A FMMT-A06 BCW33 | |
NPN marking 8e
Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 NPN marking 8e FMMT2222A H9 sot 23 BCW33 | |
Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
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OCR Scan |
OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING | |
Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 Diodes Marking K7 Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted |
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OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA | |
BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P | |
SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
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OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration |
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OT-23 CMBT3906 C-120 | |
marking k4
Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
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OCR Scan |
OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 marking k4 100az FMMT2222A BCW33 | |
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Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A |
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OT-23 CMBT3906 C-120 | |
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Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage |
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MMBT3906K MMBT3906K OT-23 | |
KST3906
Abstract: WH*s
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KST3906 OT-23 KST3906 WH*s | |
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Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage |
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KST3906 OT-23 | |
MMBT3906 UTCContextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) |
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MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC | |