SMD RGS Search Results

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

transistor smd MJ 145

Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Contextual Info: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter

6 pin TRANSISTOR SMD CODE PA

Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Contextual Info: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol

smd rgs

Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
Contextual Info: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

BSO200P03S

Abstract: 1A smd mosfet TRANSISTOR SMD 1a 9 diode 91A IC MOSFET QG MOSFET KV MOSFET Rise Time 1 ns smd transistor dp smd diode dp smd rgs
Contextual Info: MOSFET IC SMD Type MOS Small Signal Transistor KSO200P03S BSO200P03S Features P-Channel Enhancement mode Logic level Avalanche rated dv /dt rated Ideal for fast switching buck converter Absolute Maximum Ratings Ta = 25 Parameter Continuous drain current Symbol

2N7002 NXP MARKING

Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Contextual Info: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

5N20V

Contextual Info: MOSFET IC SMD Type Dual N-Channel PowerTrench MOSFET 5N20V TSSOP-8 Unit: mm Features Typical RDS on =0.03 @ 4.5V Typical RDS(on)=0.037 @ 2.7V Ultra Low Threshold Standard Outline For Esay Automated Surface Mount Assembly Absolute Maximum Ratings Ta = 25 Parameter

A1502

Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
Contextual Info: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID

Contextual Info: IC IC SMD Type Mesh Overlay Power MOSFET KTS1C1S250 Features Typical RDS on (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0)

Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2532 FDB2532 TO-263 Unit: mm rDS(ON) = 14m +0.1 1.27-0.1 Features (Typ.), VGS = 10V, ID = 33A +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Q67042-S4057

Abstract: Q67042-S4058 SPI100N03S2-03 SPP100N03S2-03 ANPS071E SPB100N03S2-03 pn0303
Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance

2N0605

Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
Contextual Info: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55

Q67042-S4057

Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking

2N0807

Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
Contextual Info: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID

Q67065-A7014

Abstract: IPI80N06S3L06
Contextual Info: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80

P Channel STripFET

Abstract: P Channel low gate charge STripFET
Contextual Info: IC IC SMD Type STripFET TM Power MOSFET KTS3C3F30L Features Typical RDS on (N-Channel)=50m Typical RDS(on) (N-Channel)=140m Standard outline for easy automated surface mount assembly Low threshold drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage (VGS = 0)

Q67042-S4057

Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ

Q67042-S4057

Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance

smd transistor ja

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type N-Channel PowerTrench MOSFET KDD2572 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Typ. , VGS = 10V, ID = 9A Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) 2.3 Qualified to AEC Q101

pn06l05

Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4

m6175

Contextual Info: Preliminary Data Sheet IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 21.3 25 V mΩ

Contextual Info: Transistors IC SMD Type Product specification KDD2572 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Typ. , VGS = 10V, ID = 9A Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) 2.3 Qualified to AEC Q101 +0.1