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    IPB100N06S3L-03 Search Results

    IPB100N06S3L-03 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB100N06S3L-03
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF 193.45KB 9
    IPB100N06S3L-03
    		Infineon Technologies OptiMOS -T Power-Transistor Original PDF 155.96KB 8
    SF Impression Pixel

    IPB100N06S3L-03 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB100N06S3L-03

    POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 55V, 0.0043OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () IPB100N06S3L-03 104
    • 1 $3.45
    • 10 $2.53
    • 100 $2.30
    • 1000 $2.30
    • 10000 $2.30
    		Buy Now
    IPB100N06S3L-03 94
    • 1 $3.46
    • 10 $3.46
    • 100 $1.73
    • 1000 $1.73
    • 10000 $1.73
    		Buy Now
    IPB100N06S3L-03 5
    • 1 $3.36
    • 10 $2.24
    • 100 $2.24
    • 1000 $2.24
    • 10000 $2.24
    		Buy Now