IPB80N06S3L-06 Search Results
IPB80N06S3L-06 Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB80N06S3L-06 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 5.6 mOhm; ID (max): 80.0 A; RthJC (max): 1.1 K/W; | Original | 186.96KB | 9 | ||
| IPB80N06S3L-06 |
|
OptiMOS -T Power-Transistor | Original | 154.52KB | 8 |
IPB80N06S3L-06 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB80N06S3L-06Power Field-Effect Transistor, 80A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S3L-06 | 5,457 |
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