2N0807
Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
Contextual Info: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID
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spi80n08s2-07spp80n08s2-07spb80n08s2-07p-to262-3-1+7p-to263-3-2p-to220-3-12n0807q67060-s6082q67040-s42632n08q67040-s4264
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2N0807
Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode 175°C operating temperature Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m 80 A P- TO220 -3-1
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spi80n08s2-07spp80n08s2-07spb80n08s2-07q67040-s4263+82n0807q67040-s4264q67060-s6082s42642n08120d-22infineon part marking to263anps071e
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2N0807
Abstract: IPP80N08S2-07 IPB80N08S2-07 IPI80N08S2-07 2n08 SMD diode 132A PG-TO263-3-2 SP0002-19048 SP0002-19043
Contextual Info: IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipb80n08s2-07ipp80n08s2-07ipi80n08s2-07pg-to263-3-2+7pg-to220-3-1pg-to262-3-1sp0002-190482n08072n08smd diode 132asp0002-19043
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2N0807
Abstract: Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G
Contextual Info: SPP80N08S2-07 SPB80N08S2-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode •=175°C operating temperature VDS 75 V RDS on max. SMD version 7.1 mΩ ID 80 A P-TO263-3-2 • Avalanche rated P-TO220-3-1
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spp80n08s2-07spb80n08s2-07p-to263-3-2p-to220-3-1+7q67040-s42632n080766a smdq67040-s4264smd diode 132as42646020g
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2N0807
Abstract: Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 SPP80N08S2-07 A410
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 7.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2
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spi80n08s2-07spp80n08s2-07spb80n08s2-07q67040-s4263+6q67040-s42642n0807q67060-s6082s4264anps071ea410
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2N0807
Abstract: INFINEON PART MARKING to263
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode ID 175°C operating temperature P- TO262 -3-1 Avalanche rated max. SMD version P- TO263 -3-2 V 7.1 m 80 A P- TO220 -3-1
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spi80n08s2-07spp80n08s2-07spb80n08s2-07q67040-s4263+4q67040-s4264q67060-s60822n0807infineon part marking to263
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