SILICON Search Results

Contextual Info: TOSHIBA TC4030BP/BF/BFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tran^riRP Tran^fiRF Trzin^nRFM • ^ w » . g ■ ^ w » . f ■ 'w ■■ - - Note The JEDEC SOP (FN) is not available in TC4030B QUAD EXCLUSIVE - OR GATE Japan. TC4030B contains four circuits of exclusive OR gates. Since

2sc3310

Contextual Info: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A

7S47

Abstract: TD62308BP N/7S47
Contextual Info: TOSHIBA-, ELECTRONIC D2 TD62308BP TD62308BP D eT| T O T 7547 OQlûTMS ñ | T-52-13-01 BIPOLAR DIGITAL INTEGRATED CIRCUI I SILICON MONOLITHIC LOW INPUT ACTIVE 1.5A DRIVER Unit in nun Features . Output Current. 1.5A Max. . High Sustaining Voltage.

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

MP4007

Contextual Info: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.

toshiba p300

Abstract: kd qa
Contextual Info: INTEGRATED T O SH IB A 8 -B IT CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74ACT299P/F/FW DATA SILICON MONOLITHIC PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR The TC74ACT299 is an advanced high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate and

TC74AC373

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC37BP/F/FW/FS DATA SILICON MONOLITHIC OCTAL D -TYP E LATCH WITH 3 -STATE OUTPUT The TC74AC373 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon

YTF822

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance

TC4538

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4538BP/BF TC4538BP/TC4538BF DUAL PRECISION RETRIGGERABLE/RESETTABLE MONOSTABLE MULTIVIBRATOR The TC4538BP/BF is the retriggerable/resettable monostable multivibrator and the trigger operation can be made at either the leading or trailing edge by

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

74ALS05

Abstract: diode sy 106 diode sy 180 10
Contextual Info: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst

Contextual Info: TOSHIBA TC4040BP/BF/BFN TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT T r A flA flR P • m g ■ ^mf TTZLiMflRF m bmt ■ TC4040B 12 STAGE RIPPLE-C A R R Y BINARY COUNTER/DIVIDERS SILICON M ONOLITHIC g TrZLilZLORFM m ■ ^mf ■ m f ■ ■ v Note The JEDEC SOP (FM) is not available in

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

MG100Q2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:

2sc2824

Abstract: 2SA1184
Contextual Info: TOSHIBA íDISCRETE/OPTOJ Ib DE I TDTTESD a007Etob M |~~ Y ' 9097250 T O SH IB A DISCRETE/ OP TO 56C 07266 ' D JT- 3 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S 2 A 1 1 8 4 Unit in mra AUDIO FREQUENCY POWER A M P L I F I E R APPLICATION S. 7.9 MAX. ^3.1d-Ql5

2SK578

Abstract: 2SK57
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

MG400 TOSHIBA

Contextual Info: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

2SD819

Contextual Info: 2SD819 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit In mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0S5.OMAX. FEATURES: eteLOMAX. • High Voltage :V c b q =1500V . Low Saturation Voltage :VcE sat =4V (Typ.) + 0.09 4.0— 0.03 (IC=3A, IB=0.8A) • High Speed

diode SS 3

Contextual Info: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

diode E155

Abstract: mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

T500mA

Contextual Info: TD62107F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107F DARLINGTON DRIVER WITH ENABLE_ The T D 6 2 1 0 7 F is c omprised of four NPN d a rlington output stages and enable inputs w h i c h can gate the outputs. All o u t p u t s feature integral c lamp diodes for s w i t c h ­