SIB417EDK Search Results
SIB417EDK Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIB417EDK-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 9A SC75-6 | Original | 9 |
SIB417EDK Price and Stock
Vishay Intertechnologies SIB417EDK-T1-GE3Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIB417EDK-T1-GE3 | 3,000 |
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SIB417EDK-T1-GE3 | 2,000 |
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| SIB417EDK-T1-GE3 | 1,989 | 1 |
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SIB417EDK-T1-GE3 | 1,591 |
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| SIB417EDK-T1-GE3 | 1,591 |
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SIB417EDK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 |
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sib417edksc-752002/95/ecsc-75-6l-single+2 | |
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Contextual Info: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 |
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sib417edksc-752002/95/ecsc-75-6l-single+3 | |
SC-75Contextual Info: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 |
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sib417edksc-752002/95/ecsc-75-6l-single+1 | |
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Contextual Info: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 |
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sib417edksc-752002/95/ecsc-75-6l-single+2 | |
58arContextual Info: New Product SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V |
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sib417edksc-75sc-75-6l-singlesib417edk-t1-ge3+2 | |
marking code vishay SILICONIXContextual Info: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 |
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sib417edksc-752002/95/ecsc-75-6l-single+4 | |
SC-75Contextual Info: New Product SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V |
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sib417edksc-75sc-75-6l-single18-jul-08 | |
SC-75Contextual Info: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5 |
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sib417edksc-752002/95/ecsc-75-6l-single+1 | |
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Contextual Info: SPICE Device Model SiB417EDK Vishay Siliconix P-Channel 1.2 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sib417edk18-jul-08 | |
AN609Contextual Info: SiB417EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, |
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sib417edkan60910-jun-08 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 | |