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SI4806DY Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si4806DY		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
Si4806DY		Vishay Intertechnology	N-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET	Original	PDF	74.06KB	5
SI4806DY-T1		Vishay Intertechnology	N-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET	Original	PDF	74.06KB	5

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Vishay Siliconix


Vishay Siliconix SI4806DY N-CHANNEL 30:1 RATIO DUAL-GATE 30-V (D-S) MOSFET Power Field-Effect Transistor, 7.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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SI4806DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4806DY Abstract: A77C Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 30 Gate 2 D SO-8 G2 1 8 NC G1 2 7 D	Original	si4806dy s-00652--rev 27-mar-00 a77c	PDF
Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	si4806dy si4806dy-t1 08-apr-05	PDF
Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 RDS(ON) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 30 Gate 2 D SO-8 G2 1 8 NC G1 2 7 D	Original	si4806dy s-00652 27-mar-00	PDF
Contextual Info: Si4806DY Siliconix N-Ch 30:1 Ration Dual-Gate 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 RDS(ON) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 30 Gate 2 D SO-8 NC G2 1 8 G1 2 7 D S 3 6 D S 4	Original	si4806dy s-49530--rev 19-nov-97	PDF
Dual-Gate Mosfet Abstract: dual gate mosfet Si4806DY Si4806DY-T1 Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	si4806dy si4806dy-t1 s-31726--rev 18-aug-03 +2dual-gate mosfet dual gate mosfet	PDF
Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET D 100% Rg Tested	Original	si4806dy si4806dy-t1 s-31726--rev 18-aug-03	PDF
Si4806DY Contextual Info: Si4806DY Dual Gate, N-Channel Enhancement-Mode MOSFET Product Summary VDS V Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V "7.7 0.03 @ VGS = 4.5 V "6.4 0.25 @ VGS = 10 V "2.0 0.40 @ VGS = 4.5 V "1.5 D SOĆ8 G2 1 8 NC G1 2 7 D S 3 6 D S 4 5 D G1 G2	Original	si4806dy s-51473--rev 10-feb-97	PDF
Si4806DY Abstract: Si4806DY-T1 Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	si4806dy si4806dy-t1 18-jul-08	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	ao4405 ao4407 ao4408 ao4409 +16ao4410 ao4411 ao4413 ao4415 ao4422 ao4700 irf1830g irf1830 transistor irf1830g apm2054n equivalent apm2054n ap85l02h ap70n03s 2sk3683 ap70l02h 2sk2696	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	si4831dy si4833dy si4852dy si4816dy +1410single vn50300l vn50300t ot-23 vn66afd vn10kls mosfet bs250 si4730 sup85n03-04p si4835dy si5504 si3459dv sup65p06 sub75p05	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2n7000 2n7002 2sj377 2sj378 +162sj380 2sj401 2sj402 2sj407 2sj412 2sj419 yta630 mtw14p20 bss125 mtaj30n06hd 2sk2837 equivalent smu10p05 smp60n06 replacement ste180n10 rfh75n05e irfd620	PDF
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	wn1053 wn1087-18r wn1087-tr1 wn1090 +16wn1125 wn1142 wn1158-ta wn1165-tr1 wn1170 wn934 temic k153p tshf5471 tfmw5380 dn1328 tdsr5156 dn904 tdsr5153 hs0038 ir sensor tlvd4900 tcdf1910	PDF
sud50n025-06p Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110 Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m	Original	vsa-sg0019-0310 sud50n025-06p sud70n03-04p si9120 +7sum45n25 si9119 si7810dn sud50n025-09p si2301ads si4732cy si9110	PDF