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    SI3N4 Search Results

    SI3N4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TGF1350

    Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


    OCR Scan     		TGF1350 TGF1350 PDF

    EPA240D

    Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EPA240D 33dBm EPA240D PDF

    EPA040A

    Contextual Info: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EPA040A 18GHz 12GHz EPA040A PDF

    EFC060B

    Contextual Info: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		EFC060B 12GHz 18GHz EFC060B PDF

    EFA040A-70

    Abstract: PT 1132
    Contextual Info: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EFA040A-70 70mil 12GHz 18GHz EFA040A-70 PT 1132 PDF

    EFA080A-70

    Contextual Info: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EFA080A-70 70mil 12GHz 18GHz EFA080A-70 PDF

    EMA501D

    Abstract: IDSS-30 8582
    Contextual Info: Excelics EMA501D TENTATIVE DATA SHEET 36 - 40 GHz Medium Power MMIC FEATURES • • • • • • • 36 -40 GHz BANDWIDTH +21 dBm OUTPUT POWER @1dB Gain Compression 23 dB TYPICAL POWER GAIN DUAL BIAS SUPPLY 0.3 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EMA501D EMA501D IDSS-30 8582 PDF

    EPA060A

    Abstract: 419-1 MAG EPA060AV
    Contextual Info: Excelics EPA060A/EPA060AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA060A/EPA060AV EPA060A EPA060AV 18GHz EPA060A G1537 EPA060AV. 419-1 MAG PDF

    HV200

    Abstract: Si3N4
    Contextual Info: HA-2640/883 Die Characteristics DIE DIMENSIONS: 93 x 68 x 19 mils ± 1 mils 2360 x 1720 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride Si3N4 over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ


    Original     		HA-2640/883 HV200 ISO9000 Si3N4 PDF

    EFA480C

    Contextual Info: EFA480C Low Distortion GaAs Power FET FEATURES • • • • • • 680 104 +34.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE


    Original     		EFA480C EFA480C PDF

    EPA240BV

    Abstract: EPA240B
    Contextual Info: EPA240B/EPA240BV High Efficiency Heterojunction Power FET FEATURES • • • • • • 960 50 +32.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN FOR EPA240B AND 9.5dB FOR EPA240BV AT 18GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA240B/EPA240BV EPA240B EPA240BV 18GHz EPA240BV) PDF

    EFA1200A

    Contextual Info: EFA1200A Low Distortion GaAs Power FET FEATURES 1470 104 • • • • • • +37.0dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 12,000 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE


    Original     		EFA1200A 200mA EFA1200A PDF

    EPA060A

    Abstract: EPA060AV EPA160AV
    Contextual Info: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA060A/EPA060AV EPA060A EPA060AV 18GHz EPA160AV) EPA060A EPA160AV PDF

    EFC240B

    Contextual Info: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		EFC240B 12GHz 18GHz EFC240B PDF

    GaAs MMIC SPDT Switch

    Abstract: gaas spdt switch EMS101-P1 GaAs MMIC SPDT Switch DC 3GHz rf switch spdt High Isolation Reflective Switch 5v
    Contextual Info: EMS101-P1 DC – 6 GHz GaAs MMIC SPDT SWITCH ISSUED DATE: 10-21-03 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		EMS101-P1 EMA101-P 50ohm 31dBm -40oC -65oC 150oC GaAs MMIC SPDT Switch gaas spdt switch EMS101-P1 GaAs MMIC SPDT Switch DC 3GHz rf switch spdt High Isolation Reflective Switch 5v PDF

    EPA030B

    Contextual Info: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING


    Original     		EPA030B 12GHz EPA030B PDF

    EPA120B-100P

    Abstract: 100MIL
    Contextual Info: EPA120B-100P High Efficiency Heterojunction Power FET UPDATED 01/13/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +29.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA120B-100P 100MIL 12GHz 18GHz 175oC -65/175oC EPA120B-100P PDF

    100MIL

    Abstract: EPA240D-100P AuSn eutectic
    Contextual Info: EPA240D-100P High Efficiency Heterojunction Power FET UPDATED 11/14/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +33 dBm TYPICAL OUTPUT POWER 20 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA240D-100P 100MIL 120mA 620mA EPA240D-100P AuSn eutectic PDF

    EPA160A

    Abstract: 9018 transistor EPA160A-100P 100MIL
    Contextual Info: EPA160A-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA160A-100P 100MIL 12GHz 18GHz EPA160A 9018 transistor EPA160A-100P PDF

    EMS101-P

    Contextual Info: EMS101-P DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		EMS101-P EMS101-P 50ohm ELECTRIC1/2008 31dBm -40oC -65oC 150oC PDF

    MA 7824

    Abstract: EPA120B-100P 100MIL
    Contextual Info: EPA120B-100P High Efficiency Heterojunction Power FET UPDATED 10/30/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +29.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EPA120B-100P 100MIL 12GHz 18GHz MA 7824 EPA120B-100P PDF

    100MIL

    Abstract: GaAs FET EFA025A
    Contextual Info: EFA025A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +21.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EFA025A-100P 100MIL 12GHz 18GHz GaAs FET EFA025A PDF

    EPA120E

    Abstract: s 0938
    Contextual Info: Excelics EPA120E DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EPA120E 18GHz 12GHz EPA120E s 0938 PDF

    DIODE 4005

    Abstract: hpnd pin 0.01 pF HPND-4005 HPND4005 beam lead pin diode
    Contextual Info: Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical GOLD LEADS S1O2/Si3N4 PASSIVATION CATHODE 130 5.1 110 (4.3) 110 (4.3) 80 (3.1) 130 (5.1) 110 (4.3) • Low Resistance 4.7 Ω Typical


    Original     		HPND-4005 HPND-4005 5965-8877E DIODE 4005 hpnd pin 0.01 pF HPND4005 beam lead pin diode PDF