SDP840 Search Results

simple phototransistor

Abstract: all datasheet phototransistor phototransistor 600 nm Infrared Phototransistor led and phototransistor simple circuit SDP8405 SEP8505 SEP8705
Contextual Info: 17 September 1997 SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes

Infrared Phototransistor

Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
Contextual Info: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series

Contextual Info: SEP8525 GaAs Infrared Emitting Diode FEATURES . T-1 package . 15 ' nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties . Mechanically and spectrally matched to SDP8405/B425 phototransistor and SDP8105 photodarlington DESCRIPTION

SEP8507-001

Abstract: SEP8507
Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135“ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

Contextual Info: SDP8405 Silicon Phototransistor FEATURES . T-1 plastic package • 20° nominal acceptance angle . Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION

HOA0825-4

Abstract: HOA0825-1 HOA0825-3 HOA0825-2 7N55 6n55 2N55 HOA0825 1T55 5T55
Contextual Info: HONEYWELL INC/ MICRO M1E D • 4551330 0013fl75 1 *HONl T - Ml-73 Transmissive With Plastic Encapsulated Components Assemblies Assem blies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device fam ilies. All sensors are phototransistors.

phototransistor 600 nm

Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
Contextual Info: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION

all datasheet phototransistor

Abstract: Infrared Phototransistor SDP8406 SEP8506 SEP8706
Contextual Info: 17 September 1997 SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF

SEP8505

Abstract: infrared diode simple phototransistor Infrared Emitting Diode SDP8405 SDP8105
Contextual Info: 17 September 1997 SEP8505 GaAs Infrared Emitting Diode FEATURES • T-1 package • 15¡ nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington

Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle . Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Contextual Info: HONEYWELL INC/ MICRO M1E D 4 5 5 1 0 3 0 00 1 3 07 5 1 IH0N1 -.T-m-73 Transmissive With Plastic Encapsulated Components Assemblies Assemblies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device families. All sensors are phototransistors.

SEP8506

Abstract: SDP8000 SDP8406 SDP8106
Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

simple phototransistor

Abstract: SDP8405 SEP8505 SEP8705
Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 plastic package • 20¡ nominal acceptance angle • Consistent optical properties • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package • 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current . Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

SDP8406

Abstract: SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003 SEP8706
Contextual Info: SDP8406 Silicon Phototransistor INFRA-21.TIF FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes OUTLINE DIMENSIONS in inches (mm)

SEP8706-003

Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
Contextual Info: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106

n11a

Abstract: SDP8405 SEP8505 SEP8705 t-1 ir phototransistor
Contextual Info: SDP8405 Silicon Phototransistor FEATURES • T-1 pJaslic package ' 2 0 r nominal acceptance a n ^ e » Consistenl optical properties ' W id e sensitivity ranges ■ Mechanically and spectrally matched to S E P 8 5 0 5 and S E P S 705 n Ira red emitting d o d e i

Contextual Info: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package . 135° nominal acceptance angle . Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded

Contextual Info: SEP8505 GaAs Infrared Emitting Diode FEATURES • T-1 package • 15° nominal beam angle • 935 nm wavelength • Consistent on-axis optical properties • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington DESCRIPTION

phototransistor 650 nm

Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes «•flfSr ■ mFï ’ 5, '

SEP8506-002

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt

Infrared Phototransistor

Abstract: simple phototransistor SDP8407 diode honeywell
Contextual Info: 17 September 1997 SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor

Contextual Info: SDP8406 Silicon Phototransistor FEATURES • Sid e-looking plastic packag e • 50° nominal acce p ta n ce angle • W ide sensitivity ranges • M e ch a n ica lly and spectrally m atched to S E P 8 5 0 6 and S E P 8 7 0 6 infrared emitting diodes DESCRIPTION