6N55 Search Results

Cdp1802

Abstract: CDP1852
Contextual Info: CDP1852, CDP1852C Byte-Wide Input/Output Port March 1997 Features Description • Static Silicon-Gate CMOS Circuitry The CDP1852 and CDP1852C are parallel, 8-bit, mode-programmable input/output ports. They are compatible and will interface directly with CDP1800-series microprocessors. They

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: « ° 5 a 71 003 S50 n b - « A S f ü H A R R I S K M J S E M I C O N D U C T O R C U U H D P W l O 5 O 2 * C " F 5 2 . - 3 3 - 5 3 Byte-Wide Input/Output Port Features Description • Static Sllicon-Gate CMOS Circuitry The CDP1852 and CDP1852C are parallel, 8 bit, mode-programmabte input/output ports. They are compatible and will

6n55 data

Abstract: MTH6N60 6n55 MTH6N55
Contextual Info: MOTOROLA SC XSTRS/R F 14E D | b3b?ES4 QQÖTÖHB 7 | MOTOROLA 7 ^ 3 • SEMICONDUCTOR TECHNICAL DATA 6N55 MTH6N60 MTM6IM60 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high

P6N60

Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,

HOA0825-4

Abstract: HOA0825-1 HOA0825-3 HOA0825-2 7N55 6n55 2N55 HOA0825 1T55 5T55
Contextual Info: HONEYWELL INC/ MICRO M1E D • 4551330 0013fl75 1 *HONl T - Ml-73 Transmissive With Plastic Encapsulated Components Assemblies Assem blies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device fam ilies. All sensors are phototransistors.

Contextual Info: HONEYWELL INC/ MICRO M1E D 4 5 5 1 0 3 0 00 1 3 07 5 1 IH0N1 -.T-m-73 Transmissive With Plastic Encapsulated Components Assemblies Assemblies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device families. All sensors are phototransistors.

CDP18S601

Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Contextual Info: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

6n55

Abstract: power mosfet 6n60 TH6N55 6n55 data
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 6N 55 M T H 6 N 60 M TM 6N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,

Contextual Info: HAFRFRIS CDP1852, CDP1852C S E M I C O N D U C T O R March 1997 B yte-W ide Input/O utput Port Features Description • S ta tic S ilic o n -G a te C M O S C irc u itry The CDP1852 and CDP1852C are parallel, 8-bit, mode-programmable input/output ports. They are compatible and will

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

HOA0963-T51

Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
Contextual Info: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65

CDP1802

Abstract: cdp1852 i852 CDP1852CD CDP1852E 6n55
Contextual Info: m U U CDP1852 CDP1852C HARRIS S E M I C O N D U C T O R Byte-Wide Input/Output Port February 1992 Features Description • Static Sillcon-Gate CMOS Circuitry The CDP1852 and CDP1852C are parallel, 8 bit, mode-programmable input/output ports. They are compatible and will

CDP1802

Abstract: CDP1852CE sr flip-flop CDP1852 CDP-1802 CDP1800 CDP1852C CDP1852CD CDP1852D CDP1852E
Contextual Info: CDP1852, CDP1852C TM Byte-Wide Input/Output Port March 1997 Features Description • Static Silicon-Gate CMOS Circuitry The CDP1852 and CDP1852C are parallel, 8-bit, mode-programmable input/output ports. They are compatible and will interface directly with CDP1800-series microprocessors. They

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

CDP1852

Abstract: cdp1802 CDP1802 MICROPROCESSOR cdp1852d CDP1852CE CDP1800 CDP1852C CDP1852CD CDP1852E 6n55
Contextual Info: CDP1852, CDP1852C Byte-Wide Input/Output Port March 1997 Features Description • Static Silicon-Gate CMOS Circuitry The CDP1852 and CDP1852C are parallel, 8-bit, mode-programmable input/output ports. They are compatible and will interface directly with CDP1800-series microprocessors. They

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

CDP1802

Abstract: CDP1852 CDP1852CD CDP1852CE CDP1802 MICROPROCESSOR cdp1802 harris CDP1800 CDP1852C CDP1852D CDP1852E
Contextual Info: CDP1852, CDP1852C S E M I C O N D U C T O R Byte-Wide Input/Output Port March 1997 Features Description • Static Silicon-Gate CMOS Circuitry The CDP1852 and CDP1852C are parallel, 8-bit, mode-programmable input/output ports. They are compatible and will

C277

Abstract: 6N55 SEFH6N55
Contextual Info: SEFH6H55 SEFH7N50 6N55 SEFM7H50 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Ghannel enhancement mode P ow er-M os field effect transistors, V D SS R D S ON •d 500 V 0.8 Q 7A