SEP8507 Search Results

SEP8507-001

Abstract: SEP8507
Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135“ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

phototransistor 600 nm

Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
Contextual Info: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION

Contextual Info: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package . 135° nominal acceptance angle . Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded

Infrared Phototransistor

Abstract: simple phototransistor SDP8407 diode honeywell
Contextual Info: 17 September 1997 SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor

SEP8507

Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135° nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

SDP8407

Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION

SEP8507

Contextual Info: SDP8407 Silicon Phototransistor FEATUR ES • End-looking plastic package • 135° nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SD P8407 is an NPN silicon phototransistor molded

Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES . End-emitting plastic package • 135° nominal beam angle . 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

simple phototransistor

Abstract: phototransistor 600 nm phototransistor datasheet SDP8407
Contextual Info: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded

HOA149-1

Abstract: HOA708-1 HOA709-1 HOA708 HOA1405-1 HOA1405-2 HOA708-11 HOA709-11 HOA149 BUT 11 Transistor
Contextual Info: HONEYWELL INC/ MICRO Assemblies 11E D m 4SS1S3D 0013884 B • HON1 7 ^ > - d / Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,

HOA1397-032

Contextual Info: H O A 1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor

HOA1405-1

Abstract: HOA149-1 HOA1405-2 HOA708 HOA709-1 HOA708-1 HOA709-11 HOA708-11 HOA709 HOA149
Contextual Info: HO NE YWELL INC/ MICRO Assemblies 41E D • 4SS1A3D 0D13fifl4 2 ■ H O N L Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,

Contextual Info: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor

E5450

Abstract: E1470 1450001 345-500 SE5470 E1450 u 880 e
Contextual Info: Selection Guide - Infrared Emitting Diodes Metal Package Components P ackage Part X Beam Style Num ber (nm ) Angle Total Pow er O utput Min. M ax @ l„ P age No. Units (m A) mw 50 8 m W /cm 2 20 12 mW 50 8 m W /cm ' 20 12 mW 50 16 (Deg.) S E 1450-001 S E1450-002

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

HOA1397-002

Abstract: sensor transistor HOA1397 HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor
Contextual Info: Datasheet - HOA1397-002 HOA1397-002 HOA Series Reflective Sensor, Transistor Output, Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● Due to regional agency approval requirements, some products may not be

teradyne A360

Contextual Info: Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged in an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium

radiation detector

Abstract: HOA1397 HOA1397-001 HOA1397-031 SDP8407
Contextual Info: 17 September 1997 HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting

HOA1397

Abstract: HOA1397-001 HOA1397-031 HOA1397-032 SDP8407
Contextual Info: HOA1397-032 HOA Series Reflective Sensor, Darlington Output, Plastic Package Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile for design flexibility ● Unfocused for sensing diffused surfaces

HOA0963-T51

Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
Contextual Info: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65

HOA1397-002

Abstract: pic with ir sensor A13970
Contextual Info: HOA1397 Reflective Sensor DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1397-001, -002 or photodarlington (HOA1397-031, 032) encased side-by-side on parallel axes in a miniature black thermoplastic housing. The

teradyne A360

Abstract: IRED A360 SE1450 SE2460 SE3450 SE5450 SEP8505 SEP8506 SE1455
Contextual Info: Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study INTRODUCTION Honeywell is committed to the manufacture of reliable, high quality optoelectronic products. An ISO 9001 quality system is maintained, providing the necessary controls to assure that all product meets or exceeds the

HOA1397

Abstract: SDP8407
Contextual Info: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor

teradyne A360

Contextual Info: Reliability Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged In an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium