SDP8407 Search Results

SEP8507-001

Abstract: SEP8507
Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135“ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

phototransistor 600 nm

Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
Contextual Info: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION

Contextual Info: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package . 135° nominal acceptance angle . Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded

Infrared Phototransistor

Abstract: simple phototransistor SDP8407 diode honeywell
Contextual Info: 17 September 1997 SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor

SEP8507

Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135° nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

Contextual Info: SDP8407 Silicon Phototransistor DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded in an end-looking black plastic package. The chip is positioned to accept radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.

SDP8407

Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION

SEP8507

Contextual Info: SDP8407 Silicon Phototransistor FEATUR ES • End-looking plastic package • 135° nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SD P8407 is an NPN silicon phototransistor molded

Contextual Info: SEP8507 GaAs Infrared Emitting Diode FEATURES . End-emitting plastic package • 135° nominal beam angle . 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting

simple phototransistor

Abstract: phototransistor 600 nm phototransistor datasheet SDP8407
Contextual Info: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded

HOA1397-032

Contextual Info: H O A 1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor

Contextual Info: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

radiation detector

Abstract: HOA1397 HOA1397-001 HOA1397-031 SDP8407
Contextual Info: 17 September 1997 HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting

HOA1397

Abstract: HOA1397-001 HOA1397-031 HOA1397-032 SDP8407
Contextual Info: HOA1397-032 HOA Series Reflective Sensor, Darlington Output, Plastic Package Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile for design flexibility ● Unfocused for sensing diffused surfaces

HOA0963-T51

Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
Contextual Info: Sensing and Control ! " = = Sept, 2002 = E-mail:jian.bo.zhou@honeywell.com www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65

HOA1397-002

Abstract: pic with ir sensor A13970
Contextual Info: HOA1397 Reflective Sensor DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1397-001, -002 or photodarlington (HOA1397-031, 032) encased side-by-side on parallel axes in a miniature black thermoplastic housing. The

HOA1397

Abstract: SDP8407
Contextual Info: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor

2440-002

Contextual Info: Selection Guide - Phototransistors Metal Package Components Package Style Part Number SD1440-001 SD 1440-002 S D 1440-003 S D 1440-004 Angular Response (Deg.) Light Current (mA) Min. Max. @H (mW/cm2) Page No. 5* 100 5* 100 20* 104 5* 108 5* 108 1 .5 " 112

A1397-031

Abstract: A1397 A13970
Contextual Info: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTIO N The HOA1397 series consists of an Infrared emitting diode and an N PN silicon phototranslstor

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

A1397-001

Contextual Info: HOA1397 Reflective Sensor FE A TU R ES • C hoice of phototransistor or photodarlington output • Low p rofile fo r design fle xibility • U nfocused fo r sensing diffused surfaces D ESC R IP TIO N The H O A 1397 series consists of an infrared em itting

H0A1887

Abstract: H0A2762 H0A0825 H0A1884 H0A1881 HLC2701 SE34705470 HOA1404 H0A69
Contextual Info: Alphabetical Product Index R eference Page R eference Page R eference HLC1395 240 H0A2762 342 SE3455/5455 28 HLC2701 208 HOA2862 346 SE3470/5470 32 HLC2705 212 H0A696X/697X 376 SEP8505 36 HOA0149 228 H0A698X/699X 382 SEP8506 40 HOA0708/0709 232 H0A7720/7730