SE1450 Search Results

Contextual Info: SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTIC 25°C unless otherwise noted PARAMETER Total Power Output SE1450-001, SE1450-001 L SE1450-002, SE1450-002 L SE1450-003, SE1450-003 L SE1450-004, SE1450-004 L Forward Voltage . Reverse Breakdown Voltage

Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package «•* » 24° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

1420-002L

Abstract: ly062
Contextual Info: SD1420 Silicon Photodiode FEATU R ES • Compact, metal can coaxial package • 24 nom inal acceptance angle • W ide operating tem perature range (-55 C to +125 C) • M echanically and spectrally m atched to SE1450 and SE1470 infrared em itting diodes

Contextual Info: SD1440 Silicon Phototransistor FEATURES • Compact, metal can coaxial package • 24° nominal acceptance angle • Wide sensitivity ranges • Wide operating temperature range (-55°C to+125°C ) . Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

SD1410-003

Contextual Info: SD1410 Silicon Photodarlington FEATURES • Compact metal can coaxial package • 24° nominal acceptance angle • High output currents • Wide sensitivity ranges • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SE1450

transistor

Abstract: HOA1877-2 HOA1877-1 HOA1877-3 HOA1875-1 HOA1875-2 HOA2762-2 HOA1874-1 HOA2762-1 HOA2762
Contextual Info: HONEYWELL INC/ MICRO Assemblies M1E D M5S1Ö3G 0013074 T Transmissive With Hermetic Components IH0N1 •Wl - 73 Assem blies on this page are based on hermetic components from the SE1450, SD1410, SD1440 families. ORDER AND SPECIFICATION GUIDE Package Style

SE1450

Abstract: SD1440 SE1470
Contextual Info: SD1440 Silicon Phototransistor FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide sensitivity ranges • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

H 122 TIF

Abstract: SD1420 SE1450 SE1470 silicon photodiode spectrally matched photodiode
Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF

SD1420

Abstract: SE1450 SE1470
Contextual Info: 17 September 1997 SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

all datasheet phototransistor

Abstract: Infrared Phototransistor SD1440 SE1450 SE1470
Contextual Info: 17 September 1997 SD1440 Silicon Phototransistor FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide sensitivity ranges • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SE1450

SE1450

Contextual Info: u t s 5 & # m j ,t » lí|l?ft: 51S03J CÈ.Î5 : [ 755-fl32 79 I 1B /B 3 2 7 B S 5 9 /3 3 2 7 BB6Ü fÉ J t; 0 7 6 3 -8 3 2 7 9 2 0 3 R IíIt S lilffl ' S e n s o rO g p n I I o s z «vwvi i i p o I I o s ü . -com co m SE1450 G a A s Infrared Em ittin g Diode

GaAs 1000 nm Infrared Emitting Diode

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420

HOA1877-2

Abstract: HOA1877-1 HOA2762-2 HOA1875-1 HOA1875-2 HOA2762-1 HOA1872-2 transistor HOA1877-3 D 400 transistor
Contextual Info: HONEYWELL INC/ Assemblies MI CRO M1E D • M5 S 1 S 3 Q 001367 4 T ■H0N1 Transmissive With Hermetic Components '” H l ~ 7 ^ Assemblies on this page are based on hermetic components from the SE1450, SD1410, SD1440 families. ORDER AND SPECIFICATION GUIDE

Contextual Info: SD1410 Silicon Photodarlington FEATURES • Compact metal can coaxial package • 24° nominal acceptance angle • High output currents • Wide sensitivity ranges • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450

SD1410

Abstract: SE1450 SE1470
Contextual Info: SD1410 Silicon Photodarlington FEATURES • Compact metal can coaxial package • 24¡ nominal acceptance angle • High output currents • Wide sensitivity ranges • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450

SD1410

Abstract: SE1450 SE1470
Contextual Info: SD1410 Silicon Photodarlington FEATURES • Compact metal can coaxial package • 24¡ nominal acceptance angle • High output currents • Wide sensitivity ranges • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L se1450-003l
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410

Contextual Info: SD1410 Silicon Photodarlington FEATURES • Compact, metal can coaxial package • 24° nominal acceptance angle • High output currents • Wide sensitivity ranges • Wide operating temperature range (-55°C to +125“ C) • Mechanically and spectrally matched to SE1450 and

GaAs 1000 nm Infrared Diode,

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

Contextual Info: SD1440 Silicon Phototransistor FEATURES . Compact, metal can coaxial package • 24° nominal acceptance angle • Wide sensitivity ranges • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

SD1420

Abstract: SE1450 SE1470 SD1420-XXX
Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF

Contextual Info: SD1440 Silicon Phototransistor FEATURES • • • • Compact, metal can coaxial package 24° nominal acceptance angle Wide sensitivity ranges Wide operating temperature range (-55“C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 Infrared emitting diodes

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

M551 TRANSISTOR

Contextual Info: H0A1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range -55°C to +100°C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting