Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GAAS 1000 NM INFRARED EMITTING DIODE Search Results

    GAAS 1000 NM INFRARED EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GAAS 1000 NM INFRARED EMITTING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode GW

    Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
    Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		PDF TSML1000, TSML1020, TSML1030, TSML1040 TSML1000 TSML1020 TSML1030 TEMT1000 J-STD-020 smd diode GW TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,

    smd diode GW

    Abstract: No abstract text available
    Text: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7


    Original     		PDF TSML1000, TSML1020, TSML1030, TSML1040 TSML1000 TSML1020 TSML1030 TEMT1000 J-STD-020 smd diode GW

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    TSAL5300

    Abstract: No abstract text available
    Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 940 nm • High reliability


    Original     		PDF TSAL5300 TSAL5300 2002/95/EC 2002/96/EC 18-Jul-08

    TSAL5300

    Abstract: No abstract text available
    Text: TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm


    Original     		PDF TSAL5300 2002/95/EC 2002/96/EC TSAL5300 18-Jul-08

    TSTS7300

    Abstract: No abstract text available
    Text: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSTS7300 2002/95/EC 2002/96/EC TSTS7300 18-Jul-08

    TSAL5300-MSZ

    Abstract: No abstract text available
    Text: TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm


    Original     		PDF TSAL5300 2002/95/EC 2002/96/EC TSAL5300 11-Mar-11 TSAL5300-MSZ

    TSTS7100

    Abstract: No abstract text available
    Text: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSTS7100 2002/95/EC 2002/96/EC TSTS7100 18-Jul-08

    TSAL5100

    Abstract: Infrared Emitting Diode
    Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm


    Original     		PDF TSAL5100 2002/95/EC 2002/96/EC TSAL5100 18-Jul-08 Infrared Emitting Diode

    TSAL5100

    Abstract: high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,
    Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in


    Original     		PDF TSAL5100 TSAL5100 2002/95/EC 2002/96/EC 18-Jul-08 high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,

    TSAL6100 application

    Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
    Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode,

    TSAL6100

    Abstract: high power infrared led
    Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led

    Vishay Semiconductors tsts7500

    Abstract: TSTS7500
    Text: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSTS7500 2002/95/EC 2002/96/EC TSTS7500 18-Jul-08 Vishay Semiconductors tsts7500

    Infrared Emitting Diodes

    Abstract: No abstract text available
    Text: SMD INFRARED EMITTING DIODES BL-LS3528B1S3IR        Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available


    Original     		PDF BL-LS3528B1S3IR 850nm 100mA) 2000pcs/Reel Infrared Emitting Diodes

    J-STD-020D

    Abstract: VSMS3700 VSMS3700-GS08 VSMS3700-GS18
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 Peak wavelength: λp = 950 nm


    Original     		PDF VSMS3700 VEMT3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 J-STD-020D VSMS3700 VSMS3700-GS08 VSMS3700-GS18

    J-STD-020D

    Abstract: VSMS3700 VSMS3700-GS08 VSMS3700-GS18
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability


    Original     		PDF VSMS3700 VEMT3700 J-STD-020 2002/95/EC 2002/96/EC VSMS3700 18-Jul-08 J-STD-020D VSMS3700-GS08 VSMS3700-GS18

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE


    Original     		PDF QEE113 QEE113 QSE113

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE


    Original     		PDF QEE113 QEE113 QSE113 GrayE113

    GaAs 1000 nm Infrared Diode,

    Abstract: TEKS5400 TSKS5400S J-STD-051
    Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power


    Original     		PDF TSKS5400S TSKS5400S TEKS5400 2002/95/EC 2002/96/EC 18-Jul-08 GaAs 1000 nm Infrared Diode, TEKS5400 J-STD-051

    TSAL4400

    Abstract: APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led
    Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL4400 TEFT4300 TSAL4400 2002/95/EC 2002/96/EC 18-Jul-08 APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led

    TSAL7200

    Abstract: No abstract text available
    Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08

    TSAL7400

    Abstract: high power infrared led
    Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL7400 2002/95/EC 2002/96/EC TSAL7400 18-Jul-08 high power infrared led

    high power infrared led

    Abstract: TSAL7600
    Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL7600 2002/95/EC 2002/96/EC TSAL7600 18-Jul-08 high power infrared led

    diameter glass lens phototransistor

    Abstract: No abstract text available
    Text: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents


    OCR Scan     		PDF SE3470/5470 125aC) SD3421/5421 SD3443/5443/5491 SD3410/54 SD5600 SE3470/5470 SE3470 SE5470 SDP8406 diameter glass lens phototransistor