sd1420 datasheet & application notes


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Part	Manufacturer	Description	Type	PDF
SD1420	Honeywell	Silicon Photodiode	Original	PDF
SD1420	STMicroelectronics	800-900 MHz BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS	Original	PDF
SD1420	Microsemi	RF & Microwave Transistors 860-960MHz Class AB, Base Stations	Scan	PDF
SD1420	Spectronics	Product Data Book (Shortform)	Scan	PDF
SD1420	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
SD1420-002	Honeywell	Optical Sensors - Photodiodes, Sensors, Transducers, PHOTODIODE COAXIAL PACK	Original	PDF
SD1420-002L	Honeywell	Optical Sensors - Photodiodes, Sensors, Transducers, PHOTODIODE COAXIAL PACK	Original	PDF
SD1420-01	Advanced Power Technology	RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS	Original	PDF
SD1420-01	Microsemi	RF NPN Transistor	Scan	PDF
SD1420-01	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
SD-1420-1	Spectronics	Optoelectronic Components	Scan	PDF
SD-1420-2	Spectronics	Optoelectronic Components	Scan	PDF
SD1420-2	Spectronics	Product Data Book (Shortform)	Scan	PDF
SD1420-2L	Spectronics	Product Data Book (Shortform)	Scan	PDF

sd1420 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
di42o Abstract: 25CC M122 SD1420 SD1420-01 SD1423 Text: Cellular Base Station applications. The SD1420 was developed as a driver for the SD1423. The SD1420 is available in a studless package as the SD1420-01. ABSOLUTE MAXIMUM RATINGS (TcaEe = 25Â°C) Symbol , ) epoxy sealed ORDER CODE BRANDING SD1420 SD1420 PIN CONNECTION DESCRIPTION The SD1420 is a gold , May 1989 20.0 Â°C/W 1/3 415 SD1420 ELECTRICAL CHARACTERISTICS (TLa5U = 25CC) STATIC Symbol , 960MHz Vr.Â» = 24V 8.9 9.0 dB Cob 1.1MHz V00 - 28.0V 5.0 pF 2/3 416 SD1420 PACKAGE MECHANICAL	OCR Scan	PDF	860-960MHZ 960MHz SD1420 SD1420 SD1423. di42o 25CC M122 SD1420-01 SD1423
1994 - M122 Abstract: SD1420 SD1420-01 Text: MIN. WITH 9.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1420 BRANDING SD1420 PIN CONNECTION DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applications. The SD1420 is also available in a studless package as the SD1420-01. 1. Collector 2. Emitter 3. Base 4 , SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . . . .	Original	PDF	SD1420 SD1420 SD1420-01. M122 SD1420-01
Not Available Abstract: No abstract text available Text: > BRANDING SD1420 .280 4L STU D (M122) epoxy sealed ORDER CODE SD1420 PIN CONNECTION 4 DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applica tions. The SD1420 is also available in a studless package as the SD1420-01. ABSOLUTE MAXIMUM RATINGS (Tease = 25°C) Symbol V cbo VcEO V ebo lc P d is s Tj , ^7#® /T T SGS-THOMSON SD1420 RF & M I C R O W A V E T R A N S I S T O R S _ 8 0 0	OCR Scan	PDF	SD1420 SD1420 SD1420-01.
2004 - NPN planar RF transistor Abstract: SD1420 SD1420-01 Text: SD1420-01 is also available in a stud package as the SD1420. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 , SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features · · · · · , = 0.9 W MIN. 9.5 dB GAIN DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN , contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. SD1420-01 , factory direct. Units pF SD1420-01 PACKAGE MECHANICAL DATA Advanced Power Technology	Original	PDF	SD1420-01 SD1420-01 SD1420. NPN planar RF transistor SD1420
Not Available Abstract: No abstract text available Text: applications. The SD1420-01 is also available in a stud package as the SD1420. ABSO LUTEMAXIMUM RATING , SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features â¢ â¢ â , OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN DE SCRIPTIO N: The SD1420-01 is a gold metallized epitaxial , factory direct. SD1420-01 E CTRICAL SPE LE CIFICATIONS (Tcase = 25Â° C) STATIC Symbol Test , at WWW.ADVANCEDPOWER.COM or contact our factory direct. Units pF SD1420-01 PACKAG ME E	Original	PDF	SD1420-01 SD1420-01 SD1420.
Not Available Abstract: No abstract text available Text: SYMBOL Light Current .Â¿ 01420-002, SD1420-002L Dark Current â Reverse Breakdown Voltage , tab o r second lead welded to the can as an optional feature ( SD1420-XXXL ). Both leads are flexible , (mm) Tolerance 3 pic decimals Â±0.005(0.12) 2 pic decimals Â±0.020(0.51) SD1420-XXX D)M_10a.ds4 SD1420-XXXL j i â I ,â.020 j= L (0.51) D1A I .070(2.01} .076(1.63) 1.000 , SD1420 Silicon Photodiode FEATURES â¢ Compact, metal can coaxial package Â«â * Â» 24Â	OCR Scan	PDF	SD1420 SE1450 SE1470 SD1420 SD1420-XXXL) SD1420-XXX SD1420-XXXL
1994 - M122 Abstract: SD1420 SD1420-01 Text: MIN. WITH 9.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1420 BRANDING SD1420 PIN CONNECTION DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applications. The SD1420 is also available in a studless package as the SD1420-01. 1. Collector 2. Emitter 3. Base 4 , SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . . . .	Original	PDF	SD1420 SD1420 SD1420-01. M122 SD1420-01
SD1420 Abstract: SE1450 SE1470 SD1420-XXX Text: tab or second lead welded to the can as an optional feature ( SD1420-XXXL ). Both leads are flexible , (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SD1420-XXX .091(2.26 , (0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_10a.ds4 SD1420-XXXL , SD1420 Silicon Photodiode FEATURES · Compact, metal can coaxial package · 24¡ (nominal , matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF DESCRIPTION The SD1420 is a PN	Original	PDF	SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX SE1450 SD1420-XXX
Not Available Abstract: No abstract text available Text: Base Station applicaÂ tions. The SD1420 is also available in a studless package as the SD1420-01. , Gl SGS-THOMSON SD1420 I1L[ RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION , OPERATION â P o u t = 2.1 W MIN. WITH 9.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1420 is a gold , Resistance September 6, 1994 1/3 7 ^ 5 3 7 007022^ ? m SD1420 ELECTRICAL SPECIFICATIONS , SD1420 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0122 rev. B SGS-THOMSDN MICROELECTRONICS MINIMUM	OCR Scan	PDF	SD1420 SD1420 SD1420-01.
1997 - H 122 TIF Abstract: SD1420 SE1450 SE1470 silicon photodiode spectrally matched photodiode Text: tab or second lead welded to the can as an optional feature ( SD1420-XXXL ). Both leads are flexible , (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SD1420-XXX .091(2.26 , (0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_10a.ds4 SD1420-XXXL , SD1420 Silicon Photodiode FEATURES · Compact, metal can coaxial package · 24¡ (nominal , matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF DESCRIPTION The SD1420 is a PN	Original	PDF	SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX H 122 TIF SE1450 silicon photodiode spectrally matched photodiode
1997 - SD1420 Abstract: SE1450 SE1470 Text: -63.TIF DESCRIPTION The SD1420 is a PN junction silicon photodiode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature ( SD1420-XXXL , ) SD1420-XXX .091(2.26) ANODE CATHODE .020(0.51) .079(2.01) .076(1.93) DIA ~ ~ .062(1.57) DIA , _10a.ds4 SD1420-XXXL .091(2.26) .020 (0.51) DIA ANODE ~ ~ .079(2.01) .076(1.93) DIA CATHODE .020 , 17 September 1997 SD1420 Silicon Photodiode FEATURES · Compact, metal can coaxial package	Original	PDF	SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX SE1450
1420-002L Abstract: ly062 Text: n nnd sup ply Ihe be st p ro d u c ts po ssib le SD1420 Silicon Photodiode E L E C T R IC A L C H A R A C TE R IS TIC S (25°C unless otherw ise noted) PAR A M E TE R Light Current SD1420-002 , SD , second lead welded to the can as an optional feature ( SD1420-XXXL ). Both leads are flexible and may be , (mm) Tolerance 3 pic decim als +0.005(0.12) 2 pic decim als +0.020(0.51) SD1420-XXX ANODI (CASt.l C , SD1420 Silicon Photodiode FEATU R ES · Compact, metal can coaxial package · 24 (nom inal	OCR Scan	PDF	SD1420 SE1450 SE1470 SD1420-XXXL) SD1420-XXX 1420-002L ly062
transistor M122 Abstract: No abstract text available Text: SD1420 is a gold metaWzMt epitaxial «liicon NPN Planar Transistor designed tor high linearity Class AB operation fo r Cellular Base Station appli cations. The SD1420 was developed as a driver for the SD1423. The SD1420 is available in a studies« package as the S 0 1 480-01. 1 r:nlkv.:-rji 2 emitter a , * .2A . M in, 2.1 8.9 9.0 50 Value ly p . -u n it Man W dB pF 41b SD1420	OCR Scan	PDF	SD142Ö 860-96QMHZ 960MHz SD142Q SD1420 980MH2 SD1420 transistor M122
M142 Abstract: M118 m169 SD1400-03 M175 SD1426 SD1680 M208 SD1400-02 SD1414 Text: ) gain min (dB) Rth(\|-c) max rc/w) MAX (pf) 8TVLE vce (v) Mj (ma) SD1420-01 * 860-960 0.9 0.10 9.5 24 125 20 5 M123 SD1420 * 860-960 ÃIIIMÃÃII 0.27 9 24 200 20 5 M122 SD1398 860-960 0.60 10 24	OCR Scan	PDF	SD1414 SD1400-02 SD1496 SD1426 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 M142 M118 m169 SD1400-03 M175 SD1680 M208

Not Available Abstract: No abstract text available Text: m jm m R F P r e v e is M ic r o s m e m i 140 Cormneree Drive Montgomeryville, PA 18936-1013 Te): {21$} 631-9840 SD1420 RF & MICROWAVE TRANSISTORS 860-960MHz CLASS AB BASE STATÃON Â» FREQUENCY S60-960MH2 Â« p Q w tR o u r s .iw Â« VGLTAGE 24V Â« POWER G ASÃSi Â« CLASS AB 9,Qd8 t Â« DESfGNED FOR LINEAR OPE -ÃATiON Â« GOI.D MSTAl , Â¿ppli- 1 Â«Jlieclar cations. The SD1420 waadevsloped as a rfrivef for tbe SOI 423- Tiia SD1.4SD is	OCR Scan	PDF	SD1420 860-960MHz S60-960MH2 D1420
MS1601 Abstract: MS1529 MS1600 Text: UHF Applications Cellular Base Station 860 - 960 MHz PART NO. FREQ. (MHz) SD1420-01 MS1600 MS1601 MS1451 MS1452 MS1453 MS 1577 MS 1551 MS 1528 MS1529 MS 1454 MS 1530 MS1583 MS1578 860-960 860-960 860-960 860-960 860-960 860-960 860-900 860-960 860-900 915-960 860-960 860-960 900-960 860-900 Pout Min (W) 0.9 2.1 6 15 30 30 40 60 120 100 30 60 100 150 Pin (W) 0.1 0.27 0.6 2.4 5.3 5.3 10 12 30 25 5.3 10.5 10 24 GAIN Min (dB) 9.5 9 10 8 7.5 7.5 6 7 6 6 7.5 7.5 10 8 BIAS Vce (V) 24 24 24	OCR Scan	PDF	SD1420-01 MS1600 MS1601 MS1451 MS1452 MS1453 MS1529 MS1583 MS1578 2x250
SD-5443-3 Abstract: SD5491-4 SD5491-2 transistor 24 SD5491-5 sd5410-3 sd3410-3 SD1420-2L SD-3421-2 SD5443-2 Text: Note 3 0.2 0.2 0.2 0.2 SD1420-2 -diode 24 5.0 HA 20.0 5.0 Drawing 10 Page 40 , 40 SD1420-2L -diode 24 5.0 HA 20.0 5.0 Drawing 13 Page 40 NOTES: 1. Acceptance angle - total	OCR Scan	PDF	SD1410-1 SD1410-2 SD1410-3 SD1410-4 SD1420-2 SD1440-1 SD1440-2 SD1440-3 SD1440 SD5443-4 SD-5443-3 SD5491-4 SD5491-2 transistor 24 SD5491-5 sd5410-3 sd3410-3 SD1420-2L SD-3421-2 SD5443-2
Not Available Abstract: No abstract text available Text: BASE STATION PART NUM BER FREQ. (MHz) Po u t MIN (W) SD1420 * SD1398 SD1423 SD1424 SD1425 SD4017 SD4701	OCR Scan	PDF	SD1414 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 SD4701 SD1650 SD4600
1997 - GaAs 1000 nm Infrared Emitting Diode Abstract: SD1410 SD1420 SD1440 SE1450 Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial package · 24¡ (nominal) beam angle · 935 nm wavelength · Wide operating temperature range (-55¡C to +125¡C) · Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to	Original	PDF	SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Emitting Diode SD1420
HOA0963-T51 Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002 Text: ) (mW/cm2) V (u A) @IR=10 u A ( ) ns SD1420-002 5 20 5 5.00 50.0 24 50 SD1420-002L 5 20 5 5.00 50.0 24 50 SD2420-002 7 20 20 , (2.69) 1.000(25.40) MIN 50 75 -55 to 125 SE1450 SD1420-002 SE1470 .091(2.26 , SD1420-002L SE3450/5450 SE3455/5455 SE3470/5470 SV5637-001 75 150 -55 to 125 SE3450 , !"# 0.7 100* 150 -55 to 125 0.7 100* 150 -55 to 125 SD1420 SD1440	Original	PDF	SE3450-011 SE3450-012 SE3450-013 SE3450-014 SE3455-001 SE3455-002 SE3455-003 SE3455-004 SE3470-001 SE3470-002 HOA0963-T51 HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
H0A1887 Abstract: H0A2762 H0A0825 H0A1884 H0A1881 HLC2701 SE34705470 HOA1404 H0A69 Text: SD1410 SD1420 SD1440 SD2410 SD2420 SD2440 SD3410/5410 SD3421/5421 SD3443/5443 SD5491 SD5600/5610 SD5620	OCR Scan	PDF	HLC1395 HLC2701 HLC2705 HOA0149 HOA0708/0709 H0A0825 HOA086X/087X HOA088X/089X HOA0901 H0A09 H0A1887 H0A2762 H0A1884 H0A1881 SE34705470 HOA1404 H0A69
1996 - M231 Abstract: SD166 "class AB Linear" Text: ) POUT MIN (W) SD1420 * SD1398 SD1423 SD1424 SD1425 SD4017 SD4701 SD1650 SD4600 TSD4575 SD1660 SD1680	Original	PDF	SD1414 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 SD4701 SD1650 SD4600 M231 SD166 "class AB Linear"
1997 - SE1470 Abstract: SD1410 SD1420 SD1440 Text: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can coaxial package · 24¡ (nominal) beam angle · 880 nm wavelength · Higher output power than GaAs at equivalent drive currents · Wide operating temperature range (-55¡C to +125¡C) · Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a	Original	PDF	SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420
SD-5421-2 Abstract: SD-3421-2 SD-3422-2 sd3421-2 SD-2420-1 34222 SD-1420-2 SD-2420-2 SD-3420-1 SD-3420-2 Text: Storage SD-1420-1t 3 5 20 30 50 12 Figure 1 -65/+125 -65/+150 SD-1420-2Ã 5 6 5 5 50 50 12 Figure 1 , 60 5 20 30 50 9 Figure 1 t Offered with extra lead attached to case. Suffix "L" ( SD-1420-2L ). , for peak response and incidence for 50% of peak response. SD-1420 Series 1. Anode 2. Cathode Gold	OCR Scan	PDF	SD-1420-1t SD-1420-2Ã SD-2420-1 SD-5420-1 SD-5420-2 SD-5421-2 SO-5422-2 SD-1420-2L) SD-1420 SD-2420 SD-3421-2 SD-3422-2 sd3421-2 34222 SD-1420-2 SD-2420-2 SD-3420-1 SD-3420-2
1997 - GaAs 1000 nm Infrared Diode, Abstract: SD1410 SD1420 SD1440 SE1450 Text: SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial package · 24¡ (nominal) beam angle · 935 nm wavelength · Wide operating temperature range (- 55¡C to +125¡C) · Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can	Original	PDF	SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420

sd1420 Datasheets

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sd1420 datasheet (14)

sd1420 Datasheets Context Search

di42o

1994 - M122

Not Available

2004 - NPN planar RF transistor

Not Available

Not Available

1994 - M122

SD1420

Not Available

1997 - H 122 TIF

1997 - SD1420

1420-002L

transistor M122

M142

Not Available

MS1601

SD-5443-3

Not Available

1997 - GaAs 1000 nm Infrared Emitting Diode

HOA0963-T51

H0A1887

1996 - M231

1997 - SE1470

SD-5421-2

1997 - GaAs 1000 nm Infrared Diode,