SD1420 Search Results

Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package «•* » 24° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

1420-002L

Abstract: ly062
Contextual Info: SD1420 Silicon Photodiode FEATU R ES • Compact, metal can coaxial package • 24 nom inal acceptance angle • W ide operating tem perature range (-55 C to +125 C) • M echanically and spectrally m atched to SE1450 and SE1470 infrared em itting diodes

H 122 TIF

Abstract: SD1420 SE1450 SE1470 silicon photodiode spectrally matched photodiode
Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF

SD1420

Abstract: SE1450 SE1470
Contextual Info: 17 September 1997 SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

diode t25 4 j5

Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION

M122

Abstract: SD1420 SD1420-01
Contextual Info: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION P OUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING

Contextual Info: /T T SGS-THOMSON ^7# SD1420 RF & M I C R O W A V E T R A N S I S T O R S _ 8 0 0 - 9 0 0 M H z BASE S T A T I O N A P P L I C A T I O N S • . ■ . ■ . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION p OUT = 2.1 W MIN. WITH 9.0 dB GAIN

Contextual Info: Gl SGS-THOMSON SD1420 I1L[ RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS • 860 - 960 MHz ■ 24 VOLTS > COMMON EMITTER . GOLD METALLIZATION . CLASS A LINEAR OPERATION ■ P o u t = 2.1 W MIN. WITH 9.0 dB GAIN PIN CONNECTION DESCRIPTION

GaAs 1000 nm Infrared Emitting Diode

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420

icom sc 1025

Abstract: UHF UHF Transistors Avionics SD1512 81416-012 M105 MSC1075M MSC1090M
Contextual Info: RF NPN Power Transistors P art N um ber A M 0608-020 AM 0608-070 A M 80610-018 A M 0710-300 SD1495 SD1496 SD 1400-02 SD1420-01 ; SD 1400-03 SD 1495-03 S D 1496-03 SD1550 SD1512 M SC 81069 SD1853-01 SD1171 S D 1520-08 S D 1520-01 S D 1524-01 SD 1526-01 SD 1526-08

M122

Abstract: SD1420 SD1420-01
Contextual Info: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING

GaAs 1000 nm Infrared Diode,

Abstract: SD1410 SD1420 SD1440 SE1450
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

NPN planar RF transistor

Abstract: SD1420 SD1420-01
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and

Contextual Info: m jm m R F P r e v e is M ic r o s m e m i 140 Cormneree Drive Montgomeryville, PA 18936-1013 Te : {21$} 631-9840 SD1420 RF & MICROWAVE TRANSISTORS 860-960MHz CLASS AB BASE STATÍON » FREQUENCY S60-960MH2 « p Q w tR o u r s .iw « VGLTAGE 24V « POWER GASíSi

MS1601

Abstract: MS1529 MS1600
Contextual Info: UHF Applications Cellular Base Station 860 - 960 MHz PART NO. FREQ. Pout Pin GAIN 6jc COB PKG MHz Min (W) (W) Min (dB) Vce (V) Icq (mA) Max (°C/W) Max STYLE SD1420-01 860-960 0.9 0.1 9.5 24 125 20 5 M123 MS1600 860-960 2.1 0.27 9 24 200 20 5 M122 MS1601

di42o

Abstract: 25CC M122 SD1420 SD1420-01 SD1423
Contextual Info: M /Irl/Cf H r» f ! / / P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive ivivsi i i u u i i i ceryville, i y v i n e , rPA n 18936-1013 i i u i «i M ontgom Tel: 215 631-9840 A M M A SD1420 RF & MICROWAVE TRANSISTORS 860-960MHz CLASS AB BASE STATION

M142

Abstract: M118 m169 SD1400-03 M175 SD1426 SD1680 M208 SD1400-02 SD1414
Contextual Info: SILICON POWER TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SGS-THOMSON 800/900 MHz transistors utilize a proven refractory-gold metallization system to ensure excellent long-term reliability and device ruggednejss.

SD-5421-2

Abstract: SD-3421-2 SD-3422-2 sd3421-2 SD-2420-1 34222 SD-1420-2 SD-2420-2 SD-3420-1 SD-3420-2
Contextual Info: W AVELENGTH, nanometers WAVELENGTH, nanometers F IG U R E Z SPECTRAL RESPONSIVITY FIGURE 1. SPECTRAL RESPO NSIVITY PHOTODIODES SILICO N OPTICAL/ELECTRICAL CHARACTERISTICS (25°C) PARAMETER LIG H T CURRENT T E S T C O N D IT IO N r = 20V H as shown SYM BO L

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: S filili SILICON POWER TRANSISTORS 800/900 MHz TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SG S-THO M SO N 800/900 MHz transistors utilize a proven refractory-g old metallization system to ensure excellent long-term reliability and