SAMSUNG MEMORY Search Results
SAMSUNG MEMORY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54S189J/C | Rochester Electronics LLC | 54S189 - 64-Bit Random Access Memory |
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| 27S191DM/B | Rochester Electronics LLC | AM27S191 - 2048x8 Bipolar PROM |
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| 27S19ADM/B | Rochester Electronics LLC | AM27S19 - 256-Bit Bipolar PROM |
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| 27S07ADM/B | Rochester Electronics LLC | 27S07A - Standard SRAM, 16X4 |
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| 54LS224AJ/B | Rochester Electronics LLC | 54LS224 - 64-Bit FIFO Memories |
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SAMSUNG MEMORY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. |
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k7k1636t2ck7k1618t2c512kx36k7s1636t4c+3 | |
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Contextual Info: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than |
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
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br-10-all-001k9f2g08u0ck9k8g08u0dk9abg08u0a+7 | |
SAMSUNG GDDR4
Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
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512mb4mx32k4d2632388mx16+12 | |
gddr3
Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
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512mb200mhz128mb8mx16+12 | |
K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
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br-09-all-001k9f2g08u0bk9hcg08u1m-pcb0k9ncg08u5m-pcb0+7 | |
samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
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bro-09-dram-001samsung emmc 4.5emmcsamsung* lpddr2+7 | |
samsung ddr3
Abstract: samsung ddr3 2010 48GB ddr3 datasheet DDR3 memory HS21 HS22V HS21XM
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max192gbhs22v288gbds-10-ibm+7 | |
74lvc3245
Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
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128mb0000h0001h0002h+12 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung |
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kmm5401000b/bggd1514b1mx40kmm5401000b+5 | |
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Contextual Info: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung |
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kmm540512cm512kx40isa512kbitsx40256kx4+4 | |
samsung 8Gb nand flash
Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
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108mb/s256mbbr-06-nand-001samsung 8gb nand flash+9 | |
Flex-OneNAND Samsung
Abstract: OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader
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apr-2009flex-onenand samsungonenandsamsung note 3+6 | |
samsung nor flash
Abstract: NOR FLASH internal flash corruption
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apr-200980us/1132words64words+3 | |
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SAMSUNG MCP
Abstract: MCP MEMORY samsung board design guide mcp samsung
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apr-2009samsung mcpmcp memorysamsung board design guide+1 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung |
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m5324000v/vg/vpkmm5324000vbitsx3224-pin+5 | |
samsung LRAContextual Info: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung |
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kmm536512w3/w3gkmm536512w3a512k40-pin+6 | |
K8S2815ET
Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
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may-2009uint160x555512mbit+7 | |
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Contextual Info: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B |
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g01s111kmm594020b20-pin30-pin+4 | |
eMMC
Abstract: samsung emmc boot Samsung EMMC "boot mode" samsung emmc emmc controller emmc operation emmc samsung emmc controller datasheet eMMC memory emmc reader
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emmcsamsung emmc bootsamsung emmc "boot modesamsung emmc+6 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung |
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kmm5916000/tkm41c16000/t24-pin30-pin+4 | |
Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
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an1838nand128-anand256-anand512-a+12 | |
"at command" Samsung
Abstract: samsung nor flash 555h NOR FLASH
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555h/aah2aah/55h555h/90hxxx/00h+4 | |
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Contextual Info: SEC-MFAEG-MUtRAM-AN Software MRS for UtRAM Application Note Version 1.0, Nov-2006 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung |
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nov-2006 | |