SAMSUNG FJ Search Results

samsung LED TV

Abstract: samsung lcd monitor television sony LCD display SAMSUNG MONITOR LCD 17 SAMSUNG CRT TV samsung CRT SAMSUNG monitor 105M sony 19" lcd monitor sony tv lcd 40
Contextual Info: SAMSUNG AN A L Y S T DA Y ÎW B BBS W3TiíLee, President Business SAM S Ufi G IN A L Y Î1 IV1VÍ Samsung LCD History Industry Outlook Samsung Strategy W in d o w fo fa SAM SUNG AN U .V ÏÏD A V m u í LCD Everywhere S«AM SUNGvjimv, \Lvsim LCD Everywhere

tda 9592

Abstract: TDA 2310 verilog code for Modified Booth algorithm tda 7830 TDA 8344 sl 7221 KGL80 AO33 FD2S
Contextual Info: D • A • T • A • B • O • O • K KGL80 0.5µm 3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KGL80 0.5µm 3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

TDA 7378

Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

3,6v sl-386

Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Contextual Info: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

FD2S

Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

samsung rfs

Abstract: cable data samsung g 600 mm62.5/125 aramid rod NZDSF
Contextual Info: Samsung Electronics Fiberoptics products Indoor/Outdoor Cable Uni-tube Design SAMSUNG Indoor/Outdoor Uni-tube Design Cables SCIOU not only offer all the mechanical and environmental characteristics of outside plant cables, but also satisfy all the requirements for use in inside plant applications. Its

Contextual Info: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E KMM5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung

RA5B

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS

S/KMM5322200BW/BWG-6

Abstract: M53222
Contextual Info: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b? E KM418C256A/AL/ALL D • 7^4142 GGISÖT? 3b l « S r i G K CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

Contextual Info: SAMSUNG ELECTRONICS b7E D INC • 7 T b 4 1 4 5 D D l b 2D 5 07T KM44C4100L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC MSE ]> 7 ^ 4 1 4 2 0Q10125 • "' KM44C258B 4 MSMGK CMOS DRAM - ‘1 ' T % ¿/ 0 ' 2 S .1 5 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258B is a CMOS high speed

Contextual Info: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage

DP133

Abstract: T-CON samsung LCD TV 1ebh KS57C3016 samsung lcd monitor circuit diagram samsung lcd tv block diagrams
Contextual Info: KS57C3016 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed lor very high performance using Samsung's newest 4-tnt development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digil LCD

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPSH17 IME O | 7*11,4142 0007302 *1 | NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (T ,= 2 5 °C )

PN2222A EQUIVALENT

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS2222A 14E D 0 0073 06 | 8 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

transistor sot-23 marking L8

Contextual Info: SAMSUNG SEMICONDUCTOR INC ! MMBT4123 | 7 1 i.U « e BOOM M . s j NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic

KSR1109

Abstract: KSR2109 samsung FJ Z2400
Contextual Info: -SAMSUNG SEMICONOUCTOR_ I N c T -3S-lt:LME D | Q007Q5S S | KSR1109 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=4.7Kfl) • Complement to KSR2109

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • TTbHmS KM93C57V/KM93C67V DDlbfiH? 723 ■ PRELIMINARY CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ^ 5 .5 V • Low power consumption

Contextual Info: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage

Contextual Info: SAMSUN KS 57 C 3016 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD