km44c256bz
Abstract: KM44C256B-10
Contextual Info: KM44C258B CMOS DRAM 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C258B is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess Memory. Its de sign is o p tim ized fo r high perform ance ap p lica tio n s
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km44c258bkm44c258b-km44c258b-10100ns+4130ns20-leadkm44c256bzkm44c256b-10
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Contextual Info: SAMSUNG ELECTRONICS INC MSE ]> 7 ^ 4 1 4 2 0Q10125 • "' KM44C258B 4 MSMGK CMOS DRAM - ‘1 ' T % ¿/ 0 ' 2 S .1 5 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258B is a CMOS high speed
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0q10125km44c258bkm44c258b-130ns+4150nskm44c258b-10100ns180ns
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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km4164bpkm41c256pkm41c256jkm41c256z+15km41c257pkm41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm424c256zsimm 30-pin30-pin simm ramkm44c256bpkm41c1000bj257jkm44c256bz1k x4 static ram30-pin simm memory "16m x 8
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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km4164bpkm41c256pkm41c256jkm41c256z+14km41c257pkm41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c1000bjkm44c256bpkm41c1000bpkm41c1001bpkm44c256bjkm4164km44c1000ljkm41c464z
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