AO21 Search Results

AO211

Abstract: AO21-1
Contextual Info: CUB AO211 R Austria Mikro Systeme International 0.6 µm CMOS AO211 is an AND / OR circuit providing the logical function Q = A.B+C+D . Truth Table A L X X X H B X L X X H C L L X H X D L L H X X Capacitance Q Ci (pF) AO211 A L L H H H A B C D B Q C D Area

Contextual Info: MB88344PFV 1/2 IL16 C-MOS D/A CONVERTER 25 AO28 26 AO29 27 AO30 28 AO31 VCC 29 NC 30 VDD2 31 VSS2 32 33 AO32 34 AO33 35 AO34 36 AO35 —TOP VIEW— AO6 43 18 AO21 AO7 44 17 AO20 AO8 45 16 AO19 AO9 46 15 AO18 AO10 47 14 AO17 AO11 48 13 AO16 AO15 12 19 AO22

D1514

Contextual Info: O rd e rin g n u m b e r: E N 4 7 9 7 A CMOS LSI LC72322 No. 4797A Single-Chip Microcontroller with PLL and LCD Driver Overview The LC72322 is a single-chip microcontroller for use in electronic tuning applications. It includes on chip both LCD drivers and a PLL circuit that can operate at up to

A02H2

Abstract: EZ23 LC321664AT LC321664AT-80 TSOP44 7w7b A021-46
Contextual Info: Ordering number : EN % 4942 j _ CMOS LSI LC321664AT-80 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a

Contextual Info: T T WPF29640-120GVI WHITE /MICROELECTRONICS 64M BYTE 4x4Mx32 FLASH (5VSupply;5V Program) SIMM MODULE A D VA N C ED * FEATURES • A ccess Tim e of 120ns ■ 10,000 E rase/Program Cycles Packaging: • B lock Erase/Program Lockout du ring Pow er T ra n sitio n s

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TDA 7378

Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

4 BIT 2 INPUT MULTIPLEXER

Abstract: transistor m5c diode M5C CMLA01 M5C4 grid tie inverter schematic diagram OAI211 AOI21 OAI21 CU240
Contextual Info: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew

113 y

Abstract: HA 1329 QN-08 1329 y-448 AO2222
Contextual Info: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5

AO211

Abstract: IX 3354 AO222 ND2D2
Contextual Info: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V1.1)

tl 0741

Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2

GCK 164

Abstract: samsung 649 ao21 OA21D
Contextual Info: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp

SL 100 data sheet

Abstract: AO222 sl 100 transistor TRANSISTOR sl 100 transistor sl 100 data sheet AO211 AO22 STDH150 ND3B AO322D2
Contextual Info: LOGIC CELLS Cell Names & Function Descriptions Cell Name AD2 AD2D2 AD2D4 AD2D8 AD2B AD2BD2 AD2BD4 AD2BD8 AD3 AD3D2 AD3D4 AD4 AD4D2 AD4D4 AD5 AD5D2 AD5D4 ND2 ND2D2 ND2D4 ND2D8 ND2B ND2BD2 ND2BD4 ND2BD8 ND3 ND3D2 ND3D4 ND3D8 ND3B ND3BD2 ND3BD4 ND3BD8 ND4 ND4D2

MX2D2

Abstract: OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc
Contextual Info: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V3.1)

Contextual Info: c a WPF8M32XA-90PSC5 I/I/HITE /M ICRO ELECTRONICS 4x2Mx32 5V FLASH S IM M p relim in a ry * FEATURES • A c c e s s T im e of 90ns ■ 100,000 Erase/Program C ycles ■ Packaging: ■ O rganized as fo u r banks of 2 M x 3 2 • 80-pin S I M M ■ C o m m ercial T em peratu re Range

CTC 880

Abstract: vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2

FD2S

Abstract: STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl
Contextual Info: Intrduction to STD80/STDM80 1 Table of Contents Library Description. 1-1 Features. 1-1

dl2d

Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
Contextual Info: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5

AO11

Abstract: AO36 M62370GP AO-21
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: WF4M32-XXX5 UVHITE /M IC R O E L E C T R O N IC S 4Mx325V FLASH MODULE ADVANCED* FEATURES • Access Tim es o f 1 0 0 ,1 2 0 ,150nS ■ Packaging: ■ User co n fig u ra b le as 8 M x1 6 or 16M x8 in HIP and G4T packages. ■ • 66-pin, PGA Type, 1.385 inch square, H erm etic C eram ic HIP

Contextual Info: ça WHITE /MICROELECTRONICS WF4M32-XXX5 4MX32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Times of 1 0 0 ,1 2 0 ,150ns ■ User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. ■ Packaging: • 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic

iob25hh

Abstract: RAM256X9AA
Contextual Info: ProASICPLUS Macro Library Guide R1-2002 Actel Corporation, Sunnyvale, CA 94086 2002 Actel Corporation. All rights reserved. Part Number: 5579016-1 Release: June 2002 No part of this document may be copied or reproduced in any form or by any means without prior written consent of Actel.

3,6v sl-386

Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Contextual Info: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

inverter PURE SINE WAVE schematic diagram

Abstract: sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor
Contextual Info: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5