S13373 Search Results

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

Contextual Info: Si photodiodes S1337 series For UV to I R, precision photometry Features Applications High UV sensitivity: QE 75% λ= 200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR

Contextual Info: Siフォトダイオード S1337シリーズ 紫外～赤外精密測光用フォトダイオード 特長 用途 紫外高感度 石英窓タイプ : QE 75% (λ=200 nm) 低容量 分析機器 光計測機器など 構成／絶対最大定格 型名 S1337-16BQ

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

PD46

Abstract: S1336-44BQ PD58 52387-1010r S1336-5BK S1087-03 S1336 S1337-1010BR PD-49 S2386-8K
Contextual Info: — ‘ü V £ ti !n Bp 7C g qT • ± æ ^ B'j t# c— 11 À, ira / F«j ■& 5L hÏ üï S/jírim-ít T „PI V a­ typ i/is¡ Vh V ! Cr typ ip F Ï VR iV'i iv i 920 0.2 lk 65 5 -20-60 PD-46 0.01 920 0.2 lk 65 5 -20-60 P D '4 6 TO-5 0.01 920 0.5 lk 160

S1337-BR

Abstract: S1337-33BR S13373
Contextual Info: Si photodiode S1337 series For UV to IR, precision photometry Features Applications High UV sensitivity: QE 75% O=200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR

S1337-16BR

Abstract: S1337-1010BR S1337-66BR S1337 S1337-1010BQ S1337-16BQ S1337-33BQ S1337-33BR S1337-66BQ s1337-br
Contextual Info: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

S1337-66BQ

Abstract: S1337 S1337-1010BQ S1337-1010BR S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BR
Contextual Info: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings

Contextual Info: Si photodiodes S1337 series For UV to IR, precision photometry Features Applications High UV sensitivity: QE 75% λ=200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR

S1336-5BQ

Abstract: S1337-33BR
Contextual Info: Si Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Effective Active Outline Package Active (P.46 to 49)/ Area Size Area Window Material ' 1 (mm) (mm) (mm2) Spectral Response Range X Peak Sensitivity Wavelength Ap (nm) (nm) Short Circuit

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800

Contextual Info: Si Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Outline Package (P.40-47)/ Window Material (mm) Active Effective Spectral Area Size Active Response Area Range (mm) (mm2) (nm) Peak Sensitivity Wavelength /Ip (nm) Short Circuit

s1337-br

Abstract: S1337-1010BR S1337 S1337-33BR S1337-66BQ S1337-1010BQ S1337-16BQ S1337-16BR S1337-33BQ S1337-66BR
Contextual Info: PHOTODIODE Siフォトダイオード S1337シリーズ 紫外~赤外精密測光用フォトダイオード 特長 用途 l 高紫外感度: QE 75 % λ=200 nm l 低容量 l 分析機器 l 光計測機器など • 一般定格／絶対最大定格 型名

S1337-33BR

Abstract: s4160 S3407 S1227-66BQ S5107 8S02
Contextual Info: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.

115 320 01

Abstract: S1337-101OBR S1336-5BK 26EA
Contextual Info: Silicon Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Outline Package (P.38-42)/ Window Material* (mm) Active Area Size (mm) Effective Spectral Active Response Area Range (mm2) (nm) Peak Sensitivity Wavelength Xp Short Circuit

S1337-1010BQ

Abstract: S1337-16BQ S1337-16BR S1337 S1337-1010BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR br mark
Contextual Info: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc