S1311 Search Results

Contextual Info: SIEMENS BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 42 Vos 500 V fa 4A ^%>S oti 2CÌ Package Ordering Code TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

DS2413

Contextual Info: DS1310 PRELIMINARY DALLAS D S 1310/D S1311 Sup er Socket s e m ic o n d u c t o r PACKAGE OUTUNE FEATURES: • Built-in C M O S circuitry adds nonvolatile SR A M and real time dock to existing microcontroller-based de­ □ □ □ a n u □ □ □ n u □

C67078-S1311-A2

Contextual Info: BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 42 500 V 4A 2Ω TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ffDS on Package Ordering Code BUZ 42 500 V 4A 2 Li TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

C67078-S1311-A2

Contextual Info: BUZ 42 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 42 500 V 4A 2Ω TO-220 AB C67078-S1311-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SiR664DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0060 at VGS = 10 V 60a 0.0075 at VGS = 6 V 60a 0.0095 at VGS = 4.5 V 54 60 Qg (Typ.) 12 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switching

Contextual Info: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SPICE Device Model SiB488DK www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS426DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7619DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SiB422

Contextual Info: SPICE Device Model SiB422EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model Si7405BDN www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si7149ADP Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0052 at VGS = - 10 V - 50d 0.0095 at VGS = - 4.5 V - 50d • • • • Qg (Typ.) 43.1 nC • Material categorization: For definitions of compliance

Contextual Info: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: SiA931DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 6 V - 4.5a 0.100 at VGS = - 4.5 V - 4.5 Qg (Typ.) 4.1 nC a PowerPAK SC-70-6 Dual 1 S1 APPLICATIONS

Contextual Info: SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.0215 RDS(on) () at VGS = 4.5 V 0.0261 ID (A) • 100 % Rg and UIS Tested

s-1311

Contextual Info: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n ­

Contextual Info: SPICE Device Model SiR424DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SQ4410EY www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR426DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the