SIS427EDN Search Results
SIS427EDN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIS427EDN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A 1212-8 | Original | 13 |
SIS427EDN Price and Stock
Vishay Intertechnologies
Vishay Intertechnologies SIS427EDN-T1-GE3MOSFET P-CH 30V 50A PPAK1212-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS427EDN-T1-GE3 | Cut Tape | 13,969 | 1 |
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SIS427EDN-T1-GE3 | Tape & Reel | 36 Weeks | 3,000 |
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SIS427EDN-T1-GE3 | 11,349 |
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SIS427EDN-T1-GE3 | Tape & Reel | 3,000 |
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SIS427EDN-T1-GE3 | Reel | 3,000 |
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SIS427EDN-T1-GE3 | 1 |
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SIS427EDN-T1-GE3 | 22 Weeks | 3,000 |
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SIS427EDN-T1-GE3 | 37 Weeks | 3,000 |
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SIS427EDN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
Original |
SiS427EDN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
Original |
SiS427EDN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |