SIS427EDN Search Results

SIS427EDN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS427EDN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A 1212-8	Original	PDF		13

SIS427EDN Price and Stock

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Vishay Siliconix SIS427EDN-T1-GE3 MOSFET P-CH 30V 50A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SIS427EDN-T1-GE3	Digi-Reel			1	1 $1.09 10 $0.68 100 $0.44 1000 $0.31 10000 $0.31	Buy Now
	SIS427EDN-T1-GE3	Cut Tape			1	1 $1.09 10 $0.68 100 $0.44 1000 $0.31 10000 $0.31	Buy Now
	SIS427EDN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
Vishay Intertechnologies SIS427EDN-T1-GE3 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS427EDN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS427EDN-T1-GE3	Reel		19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now
Mouser Electronics	SIS427EDN-T1-GE3		1,233			1 $1.05 10 $0.68 100 $0.45 1000 $0.32 10000 $0.23	Buy Now
Newark	SIS427EDN-T1-GE3	Reel			3,000	1 $0.34 10 $0.34 100 $0.34 1000 $0.34 10000 $0.30	Buy Now
TTI	SIS427EDN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.22	Buy Now
TME	SIS427EDN-T1-GE3				1	1 $0.94 10 $0.63 100 $0.43 1000 $0.35 10000 $0.35	Get Quote

Avnet Asia	SIS427EDN-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	SIS427EDN-T1-GE3		39,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIS427EDN-T1-GE3			20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIS427EDN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS427EDN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiS427EDN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d, g 0.0106 at VGS = - 10 V - 50d 0.0160 at VGS = - 6 V - 42.1 0.0213 at VGS = - 4.5 V - 31.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	SiS427EDN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF