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    SI2323DDS Search Results

    SI2323DDS Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2323DDS-T1-BE3
    		Vishay Siliconix P-CHANNEL 20-V (D-S) MOSFET Original PDF 220.61KB 10
    SI2323DDS-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.3A SOT-23 Original PDF 10
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    Vishay Intertechnologies SI2323DDS-T1-GE3

    MOSFET P-CH 20V 5.3A SOT-23
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    Vishay Intertechnologies SI2323DDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    Mouser Electronics SI2323DDS-T1-BE3 44,961
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    Vishay Siliconix SI2323DDS-T1-GE3

    SI2323DDS-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 4.3 A, 20 V, 3-PIN TO-236
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    Quest Components SI2323DDS-T1-GE3 60
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    Vishay Intertechnologies SI2323DDST1GE3

    AVAILABLE EU
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    ComSIT USA SI2323DDST1GE3 2,220
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    Vishay Huntington SI2323DDS-T1-GE3

    MOSFET P-CH 20V 5.3A SOT-23
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    Win Source Electronics SI2323DDS-T1-GE3 42,000
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    SI2323DDS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si2323DDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G


    Original     		Si2323DDS O-236 OT-23) Si2323DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: SPICE Device Model Si2323DDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si2323DDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF