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SIR698DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR698DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7.5A POWERPAK	Original	PDF		9

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Vishay Intertechnologies


Vishay Intertechnologies SIR698DP-T1-GE3 Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.5A; Idm: 10A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIR698DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.74	Get Quote
Avnet Americas	SIR698DP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.60	Buy Now
Mouser Electronics	SIR698DP-T1-GE3		2,955			1 $2.23 10 $1.08 100 $0.96 1000 $0.74 10000 $0.63	Buy Now
Newark ()	SIR698DP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.61	Buy Now
	SIR698DP-T1-GE3	Bulk			1	1 $1.83 10 $1.49 100 $1.17 1000 $0.96 10000 $0.91	Buy Now
	SIR698DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.62	Buy Now
TTI	SIR698DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.63	Buy Now

Bristol Electronics	SIR698DP-T1-GE3		905			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIR698DP-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIR698DPT1GE3 Power Field-Effect Transistor, 7.5A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIR698DPT1GE3		290			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIR698DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	sir698dp 2002/95/ec sir698dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	sir698dp 2002/95/ec sir698dp-t1-ge3 11-mar-11	PDF
Contextual Info: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir698dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	sir698dp 2002/95/ec sir698dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: SiR698DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sir698dp an609 9199u 5162m +62156m 0000m 4000m 5098u 0339m 1866u	PDF
Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	sir698dp 2002/95/ec sir698dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	sir698dp 2002/95/ec sir698dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
DIODE 2524 Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET	Original	sir698dp 2002/95/ec sir698dp-t1-ge3 2011/65/eu +212-mar-12 diode 2524	PDF
SIR698DP Contextual Info: SPICE Device Model SiR698DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir698dp 2011/65/eu 2002/95/ec 12-mar-12	PDF
Contextual Info: 85V Half Bridge MOSFET Drivers with 5.5V to 16V Gate Drive MIC4604 Evaluation Board General Description The MIC4604 is an 85V Half Bridge MOSFET driver. The MIC4604 features fast 39ns propagation delay times and 20ns driver rise/fall times for a 1nF capacitive load. The	Original	mic4604 mic4604ym mic4604ymt	PDF
Contextual Info: MIC4605 Evaluation Board 85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection General Description Getting Started The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection.	Original	mic4605	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF