SI7149ADP Search Results
SI7149ADP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI7149ADP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A PPAK SO-8 | Original | 9 |
SI7149ADP Price and Stock
Vishay Siliconix SI7149ADP-T1-GE3MOSFET P-CH 30V 50A PPAK SO-8 |
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SI7149ADP-T1-GE3 | Cut Tape | 961 | 1 |
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SI7149ADP-T1-GE3 | Bulk | 6,000 |
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SI7149ADP-T1-GE3 | 372 |
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Vishay Intertechnologies SI7149ADP-T1-GE3Power MOSFET, P Channel, 30 V, 50 A, 0.0042 ohm, PowerPAK SO, Surface Mount - Product that comes on tape, but is not reeled (Alt: 70AC6511) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7149ADP-T1-GE3 | Ammo Pack | 1 |
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SI7149ADP-T1-GE3 | 83,798 |
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SI7149ADP-T1-GE3 | 57,000 | 3,000 |
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SI7149ADP-T1-GE3 | 18,000 | 30 Weeks | 3,000 |
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SI7149ADP-T1-GE3 | Reel | 51,000 | 3,000 |
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SI7149ADP-T1-GE3 | 49 |
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SI7149ADP-T1-GE3 | Reel | 75,000 | 3,000 |
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SI7149ADP-T1-GE3 | 3,571 | 1 |
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SI7149ADP-T1-GE3 | Reel | 6,000 | 3,000 |
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SI7149ADP-T1-GE3 | 34 Weeks | 3,000 |
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SI7149ADP-T1-GE3 | 328,080 |
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SI7149ADP-T1-GE3 | 33 Weeks | 3,000 |
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SI7149ADP-T1-GE3 | 9,000 | 3,000 |
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SI7149ADP-T1-GE3 | 24,000 | 1 |
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Vishay BLH SI7149ADP-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7149ADP-T1-GE3 | 62 | 6 |
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Vishay Intertechnologies SI7149ADP-T1-GE3.MOSFETs PPAKSO8 P-CH 30V 50A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7149ADP-T1-GE3. | Cut Tape | 2,000 | 10 |
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Vishay Intertechnologies SIHF15N60E-E3MOSFETs RECOMMENDED ALT SI71 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHF15N60E-E3 | Reel | 1,000 |
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SI7149ADP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Si7149ADP Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0052 at VGS = - 10 V - 50d 0.0095 at VGS = - 4.5 V - 50d • • • • Qg (Typ.) 43.1 nC • Material categorization: For definitions of compliance |
Original |
Si7149ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si7149ADP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
Si7149ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si7149ADP Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0052 at VGS = - 10 V - 50d 0.0095 at VGS = - 4.5 V - 50d • • • • Qg (Typ.) 43.1 nC • Material categorization: For definitions of compliance |
Original |
Si7149ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |