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    SIS434DN Search Results

    SIS434DN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS434DN-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 35A PPAK 1212-8 Original PDF 13
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    SIS434DN Price and Stock

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    Vishay Siliconix SIS434DN-T1-GE3

    MOSFET N-CH 40V 35A PPAK 1212-8
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    DigiKey () SIS434DN-T1-GE3 Cut Tape 23,828 1
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    SIS434DN-T1-GE3 Digi-Reel 23,828 1
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    SIS434DN-T1-GE3 Reel 21,000 3,000
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    IBS Electronics SIS434DN-T1-GE3 138,000 3,000
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    New Advantage Corporation SIS434DN-T1-GE3 60,000 1
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    Vishay Intertechnologies SIS434DN-T1-GE3

    N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIS434DN-T1-GE3)
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    Avnet Americas SIS434DN-T1-GE3 Reel 15,000 32 Weeks 3,000
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    Mouser Electronics SIS434DN-T1-GE3 53,393
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    Verical () SIS434DN-T1-GE3 48,000 3,000
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    Newark () SIS434DN-T1-GE3 Cut Tape 18,777 1
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    SIS434DN-T1-GE3 Reel 3,000
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    Bristol Electronics SIS434DN-T1-GE3 12,000 5
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    Quest Components () SIS434DN-T1-GE3 4,800
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    SIS434DN-T1-GE3 4,800
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    TTI SIS434DN-T1-GE3 Reel 393,000 3,000
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    TME SIS434DN-T1-GE3 1
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    Avnet Asia SIS434DN-T1-GE3 17 Weeks 3,000
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    Chip Stock SIS434DN-T1-GE3 30,184
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    Vyrian SIS434DN-T1-GE3 54,981
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    Vishay Huntington SIS434DN-T1-GE3

    MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R
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    Win Source Electronics SIS434DN-T1-GE3 26,684
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    SIS434DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    SiS434DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    sis434dn

    Contextual Info: SPICE Device Model SiS434DN Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    SiS434DN 18-Jul-08 PDF

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS434DN 2002/95/EC SiS434DN-T1-GE3 11-Mar-11 PDF

    sis434dn

    Abstract: AN609
    Contextual Info: SiS434DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    SiS434DN AN609, 22-Jul-09 AN609 PDF

    sis434dn

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS434DN 2002/95/EC SiS434DN-T1-GE3 18-Jul-08 PDF

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS434DN 2002/95/EC SiS434DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    SiS434DN 2002/95/EC SiS434DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater


    Original
    LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead 3350p com/LTC3350 PDF

    Sanyo supercapacitors

    Abstract: maxwell balancing
    Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors


    Original
    LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350f Sanyo supercapacitors maxwell balancing PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original
    VMN-PT0105-1007 PDF

    Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors


    Original
    LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350fa PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF