SIS434DN Search Results
SIS434DN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIS434DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 35A PPAK 1212-8 | Original | 13 |
SIS434DN Price and Stock
Vishay Intertechnologies SIS434DN-T1-GE3- Tape and Reel (Alt: SIS434DN-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS434DN-T1-GE3 | Tape & Reel | 27 Weeks | 3,000 |
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SIS434DN-T1-GE3 | Tape & Reel | 12,242 | 100 |
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| SIS434DN-T1-GE3 | Cut Tape | 12,242 | 5 |
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| SIS434DN-T1-GE3 | Cut Tape | 3,000 | 3,000 |
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| SIS434DN-T1-GE3 | Tape & Reel | 3,000 | 3,000 |
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| SIS434DN-T1-GE3 | Tape & Reel | 3,000 |
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| SIS434DN-T1-GE3 | Tape & Reel | 3,000 |
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SIS434DN-T1-GE3 | Reel | 33,000 | 3,000 |
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SIS434DN-T1-GE3 | 6,000 |
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SIS434DN-T1-GE3 | 1 |
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SIS434DN-T1-GE3 | 29 Weeks | 3,000 |
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SIS434DN-T1-GE3 | 27 Weeks | 3,000 |
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Vishay Siliconix SIS434DN-T1-GE3MOSFET N-CH 40V 35A PPAK 1212-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS434DN-T1-GE3 | Bulk | 3,000 |
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Vishay Huntington SIS434DN-T1-GE3MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS434DN-T1-GE3 | 30,000 |
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SIS434DN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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sis434dn2002/95/ecsis434dn-t1-ge32011/65/eu+1 | |
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Contextual Info: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
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sis434dn2002/95/ec2011/65/eujs709a+1 | |
sis434dnContextual Info: SPICE Device Model SiS434DN Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
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sis434dn18-jul-08 | |
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Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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sis434dn2002/95/ecsis434dn-t1-ge311-mar-11 | |
sis434dn
Abstract: AN609
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sis434dnan60922-jul-09 | |
sis434dnContextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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sis434dn2002/95/ecsis434dn-t1-ge318-jul-08 | |
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Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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sis434dn2002/95/ecsis434dn-t1-ge32011/65/eu+2 | |
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Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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sis434dn2002/95/ecsis434dn-t1-ge32011/65/eu+2 | |
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Contextual Info: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater |
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ltc335014-bit38-leadltc4425+4 | |
Sanyo supercapacitors
Abstract: maxwell balancing
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ltc335014-bit38-leadltc4425+6 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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cy8c38cy8c29incl79512t9797+16 | |
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Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating |
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vmn-pt0105-1007 | |
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Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors |
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ltc335014-bit38-leadltc4425+4 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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