S1228 Search Results
S1228 Price and Stock
Abracon Corporation ABLS-12.288MHZ-K4TCrystal; 18pF; SMD; ESR: 50Ω; 11.4x4.7mm; 12.288MHz; -40÷125°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
ABLS-12.288MHZ-K4T | 6,000 | 1,000 |
|
Buy Now | ||||||
|
ABLS-12.288MHZ-K4T | Tape & Reel | 11,000 | 14 Weeks | 1,000 |
|
Buy Now | ||||
|
ABLS-12.288MHZ-K4T | Bulk | 18 Weeks | 1,000 |
|
Get Quote | |||||
|
ABLS-12.288MHZ-K4T | Tape & Reel | 16 Weeks | 1,000 |
|
Get Quote | |||||
|
ABLS-12.288MHZ-K4T | 1 |
|
Buy Now | |||||||
|
ABLS-12.288MHZ-K4T |
|
Buy Now | ||||||||
Abracon Corporation ABLS-12.288MHZ-D-3-Y18pF; SMD; ESR: 50Ω; 11.4x4.7x4.1mm; 12.288MHz; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
ABLS-12.288MHZ-D-3-Y | 2,000 | 1,000 |
|
Buy Now | ||||||
AKYGA Semi AKS1228Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AKS1228 | 1,250 | 1 |
|
Buy Now | ||||||
Abracon Corporation EC3645ETTTS-12.288M-TR12.288MHz; SMD; 5x3.2x1.3mm; 15pF; ±50ppm; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
EC3645ETTTS-12.288M-TR | 1,000 | 1,000 |
|
Buy Now | ||||||
Abracon Corporation ABLS-12.288MHZ-D-4-Y18pF; SMD; ESR: 50Ω; 11.4x4.7x4.1mm; 12.288MHz; -40÷85°C |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
ABLS-12.288MHZ-D-4-Y | 889 | 889 |
|
Buy Now | ||||||
S1228 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SaRonix Crystal Clock Oscillator 5V, ACMOS, TTL, SMD Technical Data S1228 Series Frequency Range: 32 MHz to 125 MHz Frequency Stability: See Part Numbering Guide: ±50ppm to ±130ppm over all conditions: calibration tolerance, operating temperature, input |
Original |
50ppm130ppm10ppms1228+1 | |
Saronix Oscillator SMD Plastic
Abstract: S1228
|
OCR Scan |
s1228ds-152saronix oscillator smd plastic | |
SMD DIL OSCILLATOR
Abstract: DIL8 dil14 DIL-14 S1100 S1700 S1703 S1750 NCT 33 S1228
|
Original |
dil-14/s1228s1100s11041+11 | |
Saronix CRYSTAL oscillator
Abstract: Saronix Oscillator S1228 Saronix 24 MHz crystal CRYSTAL CLOCK OSCILLATOR Saronix crystal oscillator marking
|
Original |
s1228sbv2-092saronix crystal oscillatorsaronix oscillator+4 | |
Saronix CRYSTAL oscillator
Abstract: S1228 cmos crystal oscillator 5.0 volt SaRonix 14 Pin CRYSTAL CLOCK OSCILLATOR 6 pins SMD Saronix Oscillator
|
Original |
s1228sbv2-092saronix crystal oscillatorcmos crystal oscillator 5.0 volt+4 | |
DS1223
Abstract: DS1228S DS1229 DS232
|
OCR Scan |
ds232ds122316-pinos1228s+5 | |
|
Contextual Info: SPICE Device Model Si5440DC www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si5440dc2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SPICE Device Model Si5475DDC www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si5475ddc2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SPICE Device Model Si3442CDV www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si3442cdv2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL |
OCR Scan |
384-wt100494536-bit400mll+2 | |
|
Contextual Info: STANDARD MARKING FORMAT* 3 4 S2239 44.7360 3 STORAGE TEMPERATURE RANGE: SARONIX DATE CODE 0°C to +70°C 44.7360 MHZ -55°C to +125°C 4) INPUT SUPPLY) VOLTAGE: Rated 5VDC ±10%, Operating +4V min/+7V max 5) INPUT (SUPPLY) CURRENT: 20mA typ, 30mA max @ 25°C |
Original |
s2239ckt136s1228cgcbsar456+1 | |
DS1228
Abstract: Level Translators "Level Translators" DS1228S DS1229 DS232
|
OCR Scan |
5bl413d0qgab31ds232rs-232+6 | |
|
Contextual Info: SPICE Device Model Si5432DC www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si5432dc2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SPICE Device Model Si7322DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
Original |
si7322dn2002/95/ec2011/65/eujs709a+1 | |
|
|
|||
SI7190DPContextual Info: SPICE Device Model Si7190DP www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si7190dp2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SPICE Device Model Si7164DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si7164dp2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SQJ422EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0034 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0043 • AEC-Q101 Qualifiedc |
Original |
sqj422epaec-q101sqj422ep-t1-ge32002/95/ec+3 | |
SiP32510
Abstract: SiP32510DT-T1-GE3 36VOUT 12Vto digital camera circuit
|
Original |
sip32510tsot23-62002/95/ec2011/65/eu+5 | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
|
Original |
hx8369-a00-dshx8369-a00480rgb285october+5 | |
NEASCOT-X15TMContextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
Original |
pd98411neascot-p40tm155mbpsneascot-p40+3 | |
|
Contextual Info: SPICE Device Model Si7174DP www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si7174dp2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SPICE Device Model Si5406CDC www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si5406cdc2002/95/ec2011/65/eujs709a+1 | |
sip2100Contextual Info: New Product SiP2100 Vishay Siliconix 5 V, 1 A H-Bridge Motor Driver DESCRIPTION FEATURES The SIP2100 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to 1 A continuous current at 5 V VDD supply. The SIP2100 has two independent logic inputs that can set |
Original |
sip21002002/95/ec2011/65/eujs709a | |
|
Contextual Info: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si4401ddy2002/95/ec2011/65/eujs709a+1 | |