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    SI4401DDY Search Results

    SI4401DDY Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4401DDY-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 16.1A 8-SOIC Original PDF 10
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    SI4401DDY Price and Stock

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    Vishay Intertechnologies SI4401DDY-T1-GE3

    Trans MOSFET P-CH 40V 16.1A 8-Pin SOIC N T/R
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    Verical SI4401DDY-T1-GE3 5,333 70
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    Avnet Americas SI4401DDY-T1-GE3 Tape & Reel 52 Weeks 2,500
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    Arrow Electronics SI4401DDY-T1-GE3 Cut Strips 2 52 Weeks 1
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    Newark () SI4401DDY-T1-GE3 Bulk 41,994 1
    • 1 $1.27
    • 10 $0.98
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    • 1000 $0.54
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    SI4401DDY-T1-GE3 Cut Tape 2,500 1
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    SI4401DDY-T1-GE3 Tape & Reel 2,500 10
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    SI4401DDY-T1-GE3 Tape & Reel 2,500
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    TTI SI4401DDY-T1-GE3 Reel 15,000 2,500
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    Bristol Electronics SI4401DDY-T1-GE3 19
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    Quest Components () SI4401DDY-T1-GE3 218
    • 1 $5.40
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    SI4401DDY-T1-GE3 140
    • 1 $14.88
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    TME SI4401DDY-T1-GE3 5,333 1
    • 1 $1.31
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    Avnet Asia SI4401DDY-T1-GE3 54 Weeks 2,500
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    EBV Elektronik SI4401DDY-T1-GE3 53 Weeks 2,500
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    Vishay Siliconix SI4401DDY-T1-GE3

    MOSFET P-CH 40V 16.1A 8-SOIC
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    RS SI4401DDY-T1-GE3 Bulk 2,500
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    Vishay Intertechnologies SI4401DDY-GE3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 16.1A I(D), 40V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components SI4401DDY-GE3 309
    • 1 $5.64
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    • 100 $3.48
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    Vishay Intertechnologies SI4401DDYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4401DDYT1GE3 110,625
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    Vishay Huntington SI4401DDY-T1-GE3

    Trans MOSFET P-CH 40V 16.1A 8-Pin SOIC N T/R / MOSFET P-CH 40V 16.1A 8-SOIC
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    Win Source Electronics SI4401DDY-T1-GE3 49,950
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    SI4401DDY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si4401ddy2002/95/ecsi4401ddy-t1-ge32011/65/eu+112-mar-12 PDF

    Si4401DDY

    Contextual Info: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si4401ddy18-jul-08 PDF

    SI4401DDY

    Abstract: si4401bdy SI4401DDY-T1-GE3
    Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si4401DDY vs. Si4401BDY Description: Package: Pin Out: P-channel 40 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4401DDY-T1-GE3 Replaces Si4401BDY-T1-E3 Si4401DDY-T1-GE3 Replaces Si4401BDY-T1-GE3


    Original     		si4401ddysi4401bdysi4401ddy-t1-ge3si4401bdy-t1-e3+2si4401bdy-t1-ge308-aug-11 PDF

    SI4401DDY

    Abstract: SI4401DDY-T1-GE3 66801
    Contextual Info: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si4401ddy2002/95/ecsi4401ddy-t1-ge318-jul-08+166801 PDF

    Contextual Info: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si4401ddy2002/95/ecsi4401ddy-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si4401ddy2002/95/ecsi4401ddy-t1-ge32011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si4401ddy2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    13600M

    Abstract: Si4401DDY 51170
    Contextual Info: Si4401DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si4401ddyan6092745m6182m+76736m0843m5907m0968m4911m13600m51170 PDF

    Contextual Info: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si4401ddy2002/95/ecsi4401ddy-t1-ge311-mar-11 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF