SQJ422EP Search Results
SQJ422EP Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQJ422EP-T1_BE3 | Vishay Siliconix | MOSFET N-CH 40V 75A PPAK SO-8 | Original | 194.18KB | |||
| SQJ422EP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 75A 8-SO | Original | 10 | |||
| SQJ422EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 75A PPAK SO-8 | Original | 195.33KB |
SQJ422EP Price and Stock
Vishay Intertechnologies SQJ422EP-T1_BE3Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 75A; Idm: 300A; 83W |
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SQJ422EP-T1_BE3 | 3,000 |
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SQJ422EP-T1_BE3 | Tape & Reel | 6,000 | 30 Weeks | 3,000 |
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SQJ422EP-T1_BE3 | 8,965 |
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SQJ422EP-T1_BE3 | Tape & Reel | 3,000 |
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Vishay Intertechnologies SQJ422EP-T1_GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 62A; Idm: 300A; 83W |
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SQJ422EP-T1_GE3 | 3,000 |
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SQJ422EP-T1_GE3 | Tape & Reel | 30 Weeks | 3,000 |
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SQJ422EP-T1_GE3 | 4,766 |
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SQJ422EP-T1_GE3 | Cut Tape | 2,597 | 1 |
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| SQJ422EP-T1_GE3 | Tape & Reel | 2,597 | 100 |
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| SQJ422EP-T1_GE3 | Tape & Reel | 3,000 |
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SQJ422EP-T1_GE3 | 24 Weeks | 3,000 |
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Vishay Intertechnologies SQJ422EP-T1_JE3N-CHANNEL 40-V (D-S) 175C MOSFET - Tape and Reel (Alt: SQJ422EP-T1_JE3) |
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SQJ422EP-T1_JE3 | Tape & Reel | 17 Weeks | 3,000 |
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Vishay Intertechnologies SQJ422EP-T1-BE3MOSFETs PPAKSO8 N-CH 40V 75A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ422EP-T1-BE3 | Reel | 3,000 |
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Vishay Intertechnologies SQJ422EP-T1-GE3MOSFETs RECOMMENDED ALT SQJ4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ422EP-T1-GE3 | Reel | 3,000 |
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SQJ422EP-T1-GE3 | 26 Weeks | 3,000 |
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SQJ422EP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SQJ422EP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sqj422ep2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SQJ422EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0034 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0043 • AEC-Q101 Qualifiedc |
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sqj422epaec-q101sqj422ep-t1-ge32002/95/ec+3 | |
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Contextual Info: SQJ422EP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sqj422epan6096875m5131m+5 | |
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Contextual Info: Vishay Intertechnology, Inc. Automotive Powertrain – 12 V / 24 V One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Powertrain – 12 V / 24 V More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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ihlp-5050fd-5a31/vjaec-q200hctf235+2 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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ups-2726vmn-pl0469-1311dpak/to-252 | |
sq4435
Abstract: SQP120N10-09
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vmn-pl0469-1505sq4435sqp120n10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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aec-q101vmn-sg2151-1406 |