350MLL Search Results

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL

Contextual Info: TMS44100 4 194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY S M H S 410B — SEPTEM BER 1 9 8 9 — REVISED JANUARY 1991 This Data Sheet is Applicable to A ll TMS44100s Symbolized With Revision "B" and Subsequent Revisions as Described on Page 5-106. DM and DJ Packages*

Contextual Info: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is a fast-page dynamic RAM mod­ ule organized as 1,048,576 words by 36 bits and de­ signed to operate from a single +5-volt power supply.

Contextual Info: STK22C48 CMOS nvSRAM 2K x 8 High Performance AutoStore Nonvolatile Static RAM SlfllTEK FEATURES DESCRIPTION • 25,35 and 45ns Access Times The Simtek STK22C48 is a fast static RAM 25,35 and 45ns , with a nonvolatile EEPROM element incorpo­ rated in each static memory cell. The SRAM can be

Contextual Info: STK22C48 SimiEK CMOS nvSRAM 2K x 8 High Performance AutoStore Nonvolatile Static RAM FEATURES DESCRIPTION • • • • The Simtek STK22C48 is a fast static RAM 30,35 and 45ns , with a nonvolatile EEPROM element incorpo­ rated in each static memory cell. The SRAM can be

Contextual Info: TOSHIBA D LOGIC/MEMORY 4,194,304 W O R D x 1 B lf D Y N A M IC RA M '• c10ci754fl 0 0 2 0 1 3 2 -1 ■ T-4C-2Z-ÌST This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1