S1108 Search Results

Contextual Info: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24

Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

DG201BDQ-T1-E3

Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

si2329

Abstract: SI2329DS
Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

Contextual Info: Product is End of Life 12/2014 Si9988 Vishay Siliconix Buffered H-Bridge Driver with Integrate MOSFET DESCRIPTION FEATURES The Si9988 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 0.65 A at VDD = 5 V room temperature at

Contextual Info: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Si4340DDY

Contextual Info: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8

Contextual Info: Si7112DN Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

S11074

Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
Contextual Info: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

SC-89

Abstract: Si1024X
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

DG201A

Abstract: DG201B DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202B DG202BAK DG202BDJ
Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: SPICE Device Model SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

Contextual Info: Product is End of Life 12/2014 Si9987 Vishay Siliconix Buffered H-Bridge Driver with Integrate MOSFET DESCRIPTION FEATURES The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V room temperature at switching

Contextual Info: 2014.7 「ファインメット 」 EMC 総合カタログ 「ファインメット®」および「FINEMET®」は日立金属（株）の登録商標です。 ITやエレクトロニクス機器の小型化高性能化に伴い、電磁ノイズ対策は

socket s1

Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND

Contextual Info: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7

SI2329DS-T1-GE3

Contextual Info: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8

Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: SPICE Device Model SQ4920EY Vishay Siliconix Dual N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si2338DS

Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET