SI1553CDL Search Results

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

Si1553CDL

Contextual Info: SPICE Device Model Si1553CDL www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SI1553CDL-T1-GE3

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel ID (A)a VDS (V) RDS(on) () 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

Contextual Info: Si1553CDL-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SI1553CDL-T1-GE3

Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si1553CDL vs. Si1553DL Description: Package: Pin Out: N- and P-channel 20 V D-S MOSFETs SC-70 Identical Part Number Replacements: Si1553CDL-T1-GE3 Replaces Si1553DL-T1-E3 Si1553CDL-T1-GE3 Replaces Si1553DL-T1-GE3

Contextual Info: Si1553CDL www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.390 at VGS = 4.5 V 0.7 VDS (V) N-Channel P-Channel 20 -20 0.510 at VGS = 2.7 V 0.5 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = -4.5 V

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®