DS1107 Search Results

Contextual Info: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

dsf912sm

Abstract: DS1101SM01 2SM05 DS1107SM30 2SM15 DSF912SM26 DSF912SM01 DSF912SM18
Contextual Info: I f a v 5 5 ° C >f s m |2t O u tlin e 1030 A 12 kA 720 kA2sec 16 T y p e l\lo. V rsm V rrm DS1107SMI24 DS1107SMI25 DS1107SMi26 DS1107SM27 DS1107SM 28 DS1107SM 29 DS1107SM 30 DS1107SM31 DS1107SM 32 DS1107SM 33 DS1107SM 34 DS1107SM35 DS1107SM 36 2800 2900

GEC 44 3A

Contextual Info: AUGUST 1995 DS1107SG DS4168-2.3 DS1107SG RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 4000V VRRM 870A IF AV 15000A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

Contextual Info: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7

DS1107SG36

Abstract: AN4839 DS1107SG DS1107SG35 DS1107SG37 DS1107SG38 DS1107SG39 DS1107SG40
Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

Contextual Info: @ MITEL DS1107SG Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4168 - 2.3 DS4168 -2.4 KEY PARAMETERS VRRM 4000V IF av, 870A 'fs m 15000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

DS1107/30

Abstract: DS1107
Contextual Info: Rectifier Diode DS1107 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Free-wheeling diodes & traction. Type No. DS1107/24 DS1107/30 DS1107/32 DS1107/36 DS1107/43 VRRM Volts

DS1107SG

Abstract: DS1107SG35 DS1107SG36 DS1107SG37 DS1107SG38 DS1107SG39 DS1107SG40
Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

DS1107SG

Abstract: DS1107SG35 DS1107SG36 DS1107SG37 DS1107SG38 DS1107SG39 DS1107SG40
Contextual Info: DS1107SG DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 1121A IFSM APPLICATIONS 15000A ■ Rectification ■ Freewheel Diode

Contextual Info: SBA4086Z SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

suf 5033

Contextual Info: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It

SZA6044Z

Abstract: HEMT marking P 24 lead plastic qfn 4mmX4mm
Contextual Info: SZA-6044 SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Contextual Info: RELIABILITY MONITOR DS1230YL-100 JAN '99 LPM MONITOR - DALLAS DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230Y A1 LPM 720 Dallas 9844 JOB_NO DESCRIPTION 105760 CONDITION 23058 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 23059 STORAGE LIFE

DCR504ST

Abstract: DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces July 2002 version, AN5001-4.1 AN5001-5.0 October 2002 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

M303R

Abstract: im303 m303 DS412 DS502 DS912
Contextual Info: MARCONI CKT TECHNOLOGY 30E l> • 5783442 Q001721 T ■ " p OI-íí CONVERTER a A V A L A N C H E D IO D ES Series Type Stud Cathode Repetitive Peak Reverse Reverse Available Nonrepetltive Peak Reverse Voltage Peak Reverse Current at Tyj V RRM V VRSM V ! RM

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

Contextual Info: RFVC9750 RFVC9750Low Phase Noise Voltage Controlled Oscillator 795MHz to 858MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 795MHz TO 858MHz Package: MCM, 20-Pin, 6mmx6mm Frequency and Power versus Control Voltage  POUT 4dBm Typical  5.25V Supply 

rfha1020

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation

SUF-8533SR

Abstract: pHEMT operating junction temperature DS110718
Contextual Info: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier

c025

Abstract: trace code decoder RFMD ITW CB4 MPSS100-9-C C14C16
Contextual Info: RFSA2714 RFSA2714Parallel Controlled Digital Step Attenuator, 50 MHz to 4000 MHz PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR, 50MHz TO 4000MHz  3V and 5V Logic Compatible  On-chip Parallel Decoder  Parallel Programming Interface   C2 C4 C8 C16