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    Advanced Thermal Solutions Inc ATS-1106-C1-R0

    MAXIFLOW 1/2 BRICK HEAT SINK ASMBLY, GO - Bulk (Alt: ATS-1106-C1-R0)
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    Avnet Americas ATS-1106-C1-R0 Bulk 40 8 Weeks 1
    • 1 $12.15
    • 10 $12.15
    • 100 $12.15
    • 1000 $12.15
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    Newark ATS-1106-C1-R0 Bulk 100 1
    • 1 $29.80
    • 10 $28.37
    • 100 $27.12
    • 1000 $24.53
    • 10000 $24.05
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    Sager ATS-1106-C1-R0 163 1
    • 1 $21.39
    • 10 $19.32
    • 100 $15.97
    • 1000 $15.97
    • 10000 $15.97
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    Richardson RFPD ATS-1106-C1-R0 100
    • 1 -
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    • 100 $18.57
    • 1000 $18.57
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    Samtec Inc TMS-110-60-G-S

    - Rail/Tube (Alt: TMS-110-60-G-S)
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    Avnet Americas TMS-110-60-G-S Tube 1 Weeks 1
    • 1 $3.03
    • 10 $3.03
    • 100 $3.03
    • 1000 $1.58
    • 10000 $0.97
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    Newark TMS-110-60-G-S Bulk 161 1
    • 1 $3.35
    • 10 $3.34
    • 100 $2.44
    • 1000 $2.09
    • 10000 $2.09
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    Sager TMS-110-60-G-S 161 1
    • 1 $3.43
    • 10 $3.43
    • 100 $2.37
    • 1000 $1.74
    • 10000 $1.60
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    Master Electronics TMS-110-60-G-S
    • 1 -
    • 10 $2.71
    • 100 $2.39
    • 1000 $1.71
    • 10000 $1.21
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    Samtec Inc TMS-110-60-L-S

    - Rail/Tube (Alt: TMS-110-60-L-S)
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    Avnet Americas TMS-110-60-L-S Tube 1 Weeks 1
    • 1 $2.66
    • 10 $2.66
    • 100 $2.66
    • 1000 $1.28
    • 10000 $0.73
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    Newark TMS-110-60-L-S Bulk 161 1
    • 1 $2.80
    • 10 $2.66
    • 100 $2.10
    • 1000 $1.73
    • 10000 $1.73
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    Sager TMS-110-60-L-S 161 1
    • 1 $2.85
    • 10 $2.85
    • 100 $1.97
    • 1000 $1.38
    • 10000 $1.26
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    Microchip Technology Inc UES1106E3/TR

    Rectifier Diode 400V 2A Case A - Tape and Reel (Alt: UES1106E3/TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas UES1106E3/TR Tape & Reel 35 Weeks 100
    • 1 -
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    • 100 $18.93
    • 1000 $18.21
    • 10000 $17.75
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    Microchip Technology Inc UES1106E3/TR 35 Weeks
    • 1 $19.87
    • 10 $19.87
    • 100 $19.87
    • 1000 $19.87
    • 10000 $19.87
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    Master Electronics UES1106E3/TR
    • 1 -
    • 10 -
    • 100 $17.63
    • 1000 $17.63
    • 10000 $17.63
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    SiTime Corporation 8P34S1106NLGI8

    - Tape and Reel (Alt: 8P34S1106NLGI8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 8P34S1106NLGI8 Tape & Reel 33 Weeks 2,500
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    Find more S1106 price and stock on Findchips.com

    S1106 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7


    OCR Scan     		s1103s1104s1106ds1107+6s1108s1185ad11851n41481n914b1n5282 PDF

    Contextual Info: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24


    OCR Scan     		1101ts1102ts1103ts1104t+6s1105ts1106ts1107ts1108ts1109ts1110t PDF

    74281

    Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		sup90n08-4m8p2002/95/eco-220absup90n08-4m8p-e3+32011/65/eu12-mar-1274281 PDF

    Contextual Info: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		sir316dp2002/95/ecsir316dp-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: nPEX' POWER PA84 • PA84A • PA84S A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • T U C S O N , A R IZ O N A • A P P L IC A T IO N S H O T L IN E 8 0 0 4 2 1 - 1 8 6 5 FEATURES • • • • • • HIGH SLEW RATE — 200V/us FAST SETTLING TIME — .1% in 1ns (PA84S)


    OCR Scan     		pa84apa84s00v/usbb3584jm PDF

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


    Original     		s1-118s1-110s1-103s1-100+12s1-122s1-127ttl11ttl13ttl15ttl16diode s1 77s124diode s1diode s1 74socket s1s1-128 PDF

    Si4134DY-T1-E3

    Abstract: si4134 c065
    Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si4134dy2002/95/ecsi4134dy-t1-e3si4134dy-t1-ge3+42011/65/eu12-mar-12si4134c065 PDF

    Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si4228dy-t1-e32002/95/ec2011/65/eujs709a+102-oct-12 PDF

    SI4176DY

    Contextual Info: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si4176dy-t1-e32002/95/ec2011/65/eu12-mar-12+1si4176dy PDF

    Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si4228dy-t1-e32002/95/ec25trademarks2011/65/eu+112-mar-12 PDF

    Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si4134dy2002/95/ecsi4134dy-t1-e3si4134dy-t1-ge3+111-mar-11 PDF

    si4176

    Abstract: SI4176DY
    Contextual Info: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si4176dy-t1-e32002/95/ec11-mar-11si4176+1si4176dy PDF

    4AB20

    Contextual Info: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original     		si4936cdy-t1-e32002/95/ec2011/65/eu12-mar-12+14ab20 PDF

    Contextual Info: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		si4178dy-t1-e32002/95/ec2011/65/eu12-mar-12 PDF

    si1424

    Contextual Info: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21


    Original     		si1424edh2002/95/ecot-363sc-70+3si1424edh-t1-ge311-mar-11si1424 PDF

    Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si4134dy2002/95/ecsi4134dy-t1-e3si4134dy-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: DG2725 Vishay Siliconix Low Voltage, 1.2 , Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2725 is a CMOS Dual SPDT Dual Single Pole Double Throw analog switch. It features low on-resistance of 0.7  at 3 V power supply, fast switching speed, and low


    Original     		dg27252011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2366ds2002/95/ecot-23si2366ds-t1-ge3+22011/65/eu12-mar-12 PDF

    Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		si4134dy2002/95/ecsi4134dy-t1-e3si4134dy-t1-ge3+22011/65/eu12-mar-12 PDF

    Contextual Info: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		sir316dp2002/95/ecsir316dp-t1-ge32011/65/eu+112-mar-12 PDF

    SI106

    Abstract: SI106-100 SI106-101 SI106-120 SI106-121 SI106-150 SI106-151 SI106-180 SI106-181
    Contextual Info: SMT Power Inductor_ _ _ _ _ _ _ SI106 Type Features • Low profile 5.9mm max. height SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter,


    OCR Scan     		si106si106-100si106-120si106-150+6si106-180s1106si106-151si106-181si106-101si106-121 PDF

    74281

    Abstract: sup90n08-4m8p
    Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		sup90n08-4m8p2002/95/eco-220absup90n08-4m8p-e3+211-mar-1174281 PDF

    SI4276DY

    Contextual Info: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


    Original     		si4276dy-t1-e32002/95/ec150hay11-mar-11+1si4276dy PDF

    Contextual Info: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		si4804cdy-t1-e32002/95/ec11-mar-11 PDF