SI106 Search Results

Contextual Info: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI1067X

Contextual Info: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1062X-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

SI106

Abstract: SI106-100 SI106-101 SI106-120 SI106-121 SI106-150 SI106-151 SI106-180 SI106-181
Contextual Info: SMT Power Inductor_ _ _ _ _ _ _ SI106 Type Features • Low profile 5.9mm max. height SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter,

Contextual Info: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SC-89

Abstract: Si1065X Si1065X-T1-GE3 si1065
Contextual Info: Si1065X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1067X

Abstract: Si1067 SC-89
Contextual Info: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

74322

Abstract: Si1067X 82489 "marking code X" SC-89 Si1067 RthJA
Contextual Info: New Product Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free Option Available • TrenchFET Power MOSFET

Si1065X-T1-GE3

Abstract: Si1065X SC-89
Contextual Info: New Product Si1065X Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V • Halogen-free Option Available • TrenchFET Power MOSFET

Si1069X

Contextual Info: SPICE Device Model Si1069X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1065X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

68307

Abstract: AN609 Si1065X
Contextual Info: Si1065X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI1067X

Contextual Info: New Product Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free Option Available • TrenchFET Power MOSFET

Si1069X

Abstract: SC-89
Contextual Info: New Product Si1069X Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si106x/108x Ultra-Low Power MCU with Integrated High-Performance Sub-1 GHz Transceiver Ultra-low power 8051 µC Core - 25 MHz, single-cycle 8051 compatible CPU - 25 MIPS peak throughput with 25 MHz clock - Industry's lowest active and sleep currents - 160 µA/MHz: active mode

SI106

Contextual Info: SMT Power Inductor SI106 Type Features Low profile 5.9mm max. height SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,

74365

Abstract: 74365 data sheet Si1067X
Contextual Info: SPICE Device Model Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1069X

Contextual Info: SPICE Device Model Si1069X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI1067X

Contextual Info: Si1067X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.150 at VGS = - 4.5 V 1.06 0.166 at VGS = - 2.5V 1.0 0.214 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1067X

Abstract: 74365 Si1067 74365 data sheet
Contextual Info: SPICE Device Model Si1067X Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1065X

Abstract: S-70174 A-29 diode 518s
Contextual Info: SPICE Device Model Si1065X Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range