RTHJA Search Results

Contextual Info: Schottky Rectifier Diodes Type V rrm V Ifavm •f s m vF R thJC A A V °C/W tA = 25°C 10 ms ¡F = IfAVM tvj = 25°C RthJA tvj max outline °c/w °c BYS 21-45 45 1,0 50 0,55 - 20 125 134 BYS 21-90 90 1,0 30 0,90 - 30 125 134 BYS 22-45 45 1,7 100 0,55 - 8 125

HSK-E 6000

Abstract: skv 1/2b 6000/5400 HSK E 14000/6300 HSK-E 2500 E3500 B6000
Contextual Info: Section 10: High Voltage Rectifiers VRRM V V BR VVRMS Types V IFAV IFAV IFN VF Tamb Toil Tamb I =1A F =45°C =75°C =45°C A A A V V N Rthja High Voltage Rectifiers < 50 kV °C/W HSK E SKV 1⁄2 B 6 000 7 500 2 500 HSK E 2500/1100-0,3 8 000 10 000 3 500 HSK E 3500/1550-0,3

Contextual Info: s e m ik r d n Section 10: High Voltage Rectifiers V rrm V BR VvRMS Types (f a v If a v If n Toil Tamb =45V =75*0 =45cC A A A VF N Rthja Tamb V V V V °C/W HSKE S K V Vè B 6 000 7 500 2 500 H S K E 2500/1100-0,3 8 000 10 000 3 500 H S K E 3500/1550-0,3 12 000 15 000 5 000 H S K E 5000/2200-0,25

Semikron sk 20

Contextual Info: 15E D | SEMIKRON INC fll3tb?L 0001003 a | -T-z.3. o s SEMIKRON Section 10: High Voltage Rectifiers Ifav Ifav Ifn VF N Rthja Tamb Ton Tamb If = 1A =45°C =75°C = 45°C A A A V °c /w VflRM V BR VvBMS Types V V V 6000 7500 2500 H SK E 2500/1100-0,3 8000 10000 3500 H SK E 3500/1550-0,3

ESJA 52-12

Abstract: DT 8210 high voltage diodes HS 134 "DO 25 s8" D21-3-5 DO 25 s8 f 8212 do24S10 TV20
Contextual Info: ^ 5 Type LjIE J> m EUPEC High voltage diodes V rrm iFSM^vj I FAVM Irm 1 t = 10 ms ÎA = 45 °C tvj = kV A/°C mA RthJA tvj max °c/w °c O utline h 25 °C iF = 0,2 A -di/dt = 0,2 A /ns 1 H A /°C mA 9C2 10 C2 13 C2 16 D2 18 D2 20 D2 13.5 14 17.5 22.5 27.5

Contextual Info: LLZJ Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

diode MELF 275

Contextual Info: LLZ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: SEMISTACK - Thyristor Circuit B6C 2I Id / Irms 730 Symbol Id (B6C)2I Tamb = 35 °C Irms W1C °C Tamb = Presspack Stack 1) 2 six-pulse bridge rectifier in anti-parallel - 2 it (di/dt)cr (dv/dt)cr VGT IGT Rthja SKKT 430/20E H4 P 16/460mm 2) Features Cooling

B6C Semikube

Abstract: Semikube w3c2 921-39A sks 260 s16040
Contextual Info: SKS 159 B6U… SKS 115 B2U… Symbol Diode module Solution B6C Vv/Vd- 159 B2C Vv/Vd-115 W3C Vv/Vd-123 Preliminary SKKT 92/14 SEMIKUBE Application : Industrial Id B6C,B2C Irms (W3C) i²t (di/dt)cr (dv/dt)cr Rthja SEMIKUBE Thyristors Forced air cooled Function

skv 1/2b 6000/5400

Abstract: HSK E 14000/6300 HSK-E 6000 6000/5400 skv 1/2b 3000/2700 skv 3000
Contextual Info: Section 10: High Voltage Rectifiers VRRM V V BR VVRMS Types V IFAV IFAV IFN VF Tamb Toil Tamb I =1A F =45°C =75°C =45°C A A A V V N Rthja High Voltage Rectifiers < 50 kV °C/W HSK E 6 000 7 500 2 500 HSK E 2500/1100-0,3 8 000 10 000 3 500 HSK E 3500/1550-0,3

BOD 1-18 R

Abstract: kippdiode ABB BOD 1-17 r ABB bod 1-11 bod 1.08
Contextual Info: A S E A BROÙIN/ABB Kippdiode A3 SENICON DT- I - I 3 D DDDOen DD'Mfl3Gfl 1 Diode de retournement Breakover diode Vbo • 83D 0 0 2 1 9 Ibo Id Ih vH Iavm 1 ISM 25° C Tvj = 125°C 25°C 25° C Ta 50°C Tvj = 50° c dv/dt Ts Tvj RthJA Masse Fig. masse Typ/type

THERMAL SWITCH

Abstract: snubbers
Contextual Info: SEMISTACK - Thyristor Circuit Irms Vac Types W3C 580 400 SKS 580F W3C 400 V16 Symbol Conditions Irms i²t SEMIPACK Stack1 Three-phase AC controller SKS 580F W3C 400 V16 di/dt)cr (dv/dt)cr Rthja Tvj Tstg Tamb Visol w Options Tamb= 35°C; no overload Tamb= 35°C; 150% overload; 1min/10min

Contextual Info: Z Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

BYS 21-90

Abstract: 3045 PT bys 26-45 SCHOTTKY bys 50 2x165
Contextual Info: Schottky rectifier diodes Type Ifavm I fsm VF tA = 2 5 "C 10 ms '[ = lAv'I.I tv| = 25 "C V A A BYS 21-45 45 1.0 BYS 21-90 90 BYS 22-45 Outline RthJC RthJA 1v] ' !rt • V °c /w °c /w °c 50 0.55 - 20 125 1.0 30 0.90 - 30 125 45 1.7 100 0.55 - 8 125 BYS 22-90

Contextual Info: LLZJ Series Zener diode Features 1. Small surface mounting type 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

3045 PT

Abstract: BYS 21-45 BYS 21-90 BYS22-90 bys 26-45 PBYR BYS22-45 BYS 26-90 pbyr 1 BYV143
Contextual Info: Schottky Rectifier Diodes Type V rrm V Ifavm Ifsm vF A A V tA = 25°C 10 ms ¡F = IfAVM tvj = 25°C RthJC RthJA tvj max o utline °C/W °c/w °c BYS 21-45 45 1,0 50 0,55 - 20 125 134 BYS 21-90 90 1,0 30 0,90 - 30 125 134 BYS 22-45 45 1,7 100 0,55 - 8 125 135

n 4002

Contextual Info: Rectifier Diodes Ifrm s maximum value for continuous operation V rsm 3A V rrm 1 N 4001 . . . 4007 G Ifav (sin. 180; T am b = 45 °C; Rthja = 80 CC/W 1,4 A Types V 1 1 1 1 1 1 50 100 400 600 800 1000 N 4001 N 4002 N 4004 N 4005 N 4006 N 4007 G G G G G G T re t

hske 6000

Abstract: HSKE skv 1/2b 6000/5400 SKV1 HSK E 14000/6300 7500 3300 HSK-E 2500 B6000 HSK-E 5000 SKV1/HSK E 14000/6300
Contextual Info: S 1E D • fll3 bb?l □ D G 3 ciSci Ô53 « S E K G seMIKRDn SEMIKRON INC Section 10: High Voltage Rectifiers V rrm V BR VvHMS Types V V 6000 7500 8000 10000 12000 15000 " P 2_3> - 0 5 N Rthja Vf If a v If a v If n Tort Tamb |f — 1A Tamb =45°C =75°C =45°C

Contextual Info: SEMISTACK - Thyristor Circuit M3CA Id / Irms 2500 Symbol Id M3C Tamb = 35 °C Irms W1C °C Tamb = Presspack Stack 1 Three-pulse star with anode-side connected 2 it di/dt)cr (dv/dt)cr VGT IGT Rthja SKT 1000/18 (P 0,53/600 + P 0,53/350 + P 0,53/230) mm RC

Contextual Info: SEMISTACK - Thyristor Circuit M3CA Id / Irms 2300 Symbol Id M3C Tamb = 35 °C Irms W1C °C Tamb = Presspack Stack 1 Three-pulse star with anode-side connected 2 it di/dt)cr (dv/dt)cr VGT IGT Rthja SKT 940/40 (P 0,53/600 + P 0,53/350 + P 0,53/230) mm RC Features

hsk 103

Abstract: Hsk Data
Contextual Info: SEMIKRON Section 10: High Voltage Rectifiers V BR VvRMS T yp e s Ifav If a v Rthja High Voltage Rectifiers < 50 kV ° c /w HSK E SKV N ^ If=1A 6 000 7 500 2 500 HSK E 2500/1100-0,3 8 000 10 000 3 500 HSK E 3500/1550-0,3 12 000 15 000 5 000 HSK E 5000/2200-0,25

Contextual Info: ZMM5221B thru ZMM5261B 500mW 5% mini-M.E.L.F. ZENER DIODE Mini MELF LL-34 , SOD - 80C Hermetically Sealed, Glass Silicon Diodes ABSOLUTE MAXIMUM RATINGS (Ta = 25oC) ITEMS SYMBOL VALUE UNIT Power Dissipation PTOT 500 mW Thermal Resistance RthJA 0.3 K/mW Vf

MTZJ 188

Contextual Info: MTZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: Z Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature