C065 Search Results
C065 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| LFD21892MDPFC065 | Murata Manufacturing Co Ltd | Duplexer, 1940MHz(Tx), 892MHz(Rx) |
C065 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| C0650A.41.10 | General Cable | Multiple Conductor Cables, Cables, Wires, 2P/22 7/30TC FL/BRD 1000' | Original | 259 | |||
| C0651A.41.10 | General Cable | Multiple Conductor Cables, Cables, Wires, 3P/22 7/30TC FL/BRD 1000' | Original | 259 | |||
| C0654A.41.10 | General Cable | Multiple Conductor Cables, Cables, Wires, 6P/22 7/30TC FL/BRD 1000' | Original | 259 | |||
| C0656A.38.10 | General Cable | Multiple Conductor Cables, Cables, Wires, 8P/22 7/30TC FL/BRD SH CM | Original | 259 | |||
| C0656A.41.10 | General Cable | Multiple Conductor Cables, Cables, Wires, 8P/22 7/30TC FL/BRD 1000' | Original | 259 | |||
| C065X019KBT | Panduit | Markers, Cables, Wires - Management, WIRE MARKER ADH | Original | 1 | |||
| C065X019KCT | Panduit | Markers, Cables, Wires - Management, WIRE MARKER ADH | Original | 1 |
C065 Price and Stock
Samtec Inc IJ5C-06-5168-S-S-2 |
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Samtec Inc IJ5C-06-5550-S-S-2 |
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Samtec Inc IJ5C-06-5000-S-S-2 |
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TE Connectivity C06586-00055PC6241-20-2/4/6-9CS2502 MOQ Reduction |
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C06586-000 |
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C06586-000 |
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Samtec Inc IJ5C-06-5130-S-S-2 |
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IJ5C-06-5130-S-S-2 | 1 |
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C065 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
circuit diagram of alpha 400 power supply
Abstract: OC-768 STM-256
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Original |
hmc-c065560mwoc-768stm-256+1 | |
Indium
Abstract: MAL-C065R
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Original |
mal-c065r-30ocindium | |
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Contextual Info: HMC-C065 v01.0109 50 Gbps, AND / NAND / OR / NOR MODULE Features Supports Data Rates up to 50 Gbps Inputs Terminated Internally in 50 ohms Supports Single-Ended or Differential Operation Low Power Consumption: 560mW Less Than 200 fs Additive RMS Jitter Single -3.3 V Power Supply |
Original |
hmc-c065560mwoc-768stm-256 | |
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Contextual Info: HMC-C065 v02.0711 50 Gbps, AND / NAND / OR / NOR MODULE Features Supports Data Rates up to 50 Gbps Inputs Terminated Internally in 50 ohms Supports Single-Ended or Differential Operation Low Power Consumption: 560mW Less Than 200 fs Additive RMS Jitter Single -3.3 V Power Supply |
Original |
hmc-c065560mwoc-768stm-256 | |
6p4c JACK
Abstract: 6p6c jack 6p4c 6P6C Century Interconnect Products 6p2c 1320m
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OCR Scan |
30orts6p4c jack6p6c jack6p4c+4 | |
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Contextual Info: HMC-C065 v02.0711 50 Gbps, AND / NAND / OR / NOR MODULE Features Supports Data Rates up to 50 Gbps Inputs Terminated Internally in 50 ohms Supports Single-Ended or Differential Operation Low Power Consumption: 560mW Less Than 200 fs Additive RMS Jitter Single -3.3 V Power Supply |
Original |
hmc-c065560mwoc-768stm-256 | |
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Contextual Info: HMC-C065 v00.1208 50 Gbps, AND / NAND / OR / NOR MODULE Features Supports Data Rates up to 50 Gbps Inputs Terminated Internally in 50 ohms Supports Single-Ended or Differential operation Low Power Consumption: 560mW Less Than 200 fs Additive RMS jitter Single -3.3 V Power Supply |
Original |
hmc-c065560mwoc-768stm-256 | |
Vishay DaTE CODE tsop-6
Abstract: si3410
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Original |
si3410dv2002/95/ecsi3410dv-t1-e3si3410dv-t1-ge3+4 | |
SI4431CDYContextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
si4431cdysi4431cdy-t1-e3si4431cdy-t1-ge32011/65/eu+2 | |
95xxx
Abstract: si3434 si3495
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Original |
si3495dv2002/95/ecsi3495dv-t1-e3si3495dv-t1-ge3+5 | |
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Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized |
Original |
si4804bdy2002/95/ecsi4804bdy-t1-e3si4804bdy-t1-ge3+2 | |
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Contextual Info: SQ4940EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.055 ID (A) |
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sq4940eyaec-q1012002/95/ecsq4940ey-t1-ge3+2 | |
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Contextual Info: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
Original |
si3424cdv2002/95/ecsi3424cdv-t1-ge32011/65/eu+1 | |
s0913Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature |
Original |
si4486ey2002/95/ecsi4486ey-t1-e3si4486ey-t1-ge3+3 | |
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Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature |
Original |
si4484ey2002/95/ecsi4484ey-t1-e3si4484ey-t1-ge3+2 | |
Si3433CD
Abstract: SI3433CDV-T1 Vishay DaTE CODE tsop-6 Si3433CDV
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Original |
si3433cdvsi3433cdv-t1-e3si3433cdv-t1-ge32011/65/eu+5 | |
SI4850EY-t1g
Abstract: si4850
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Original |
si4850ey2002/95/ecsi4850ey-t1-e3si4850ey-t1-ge3+4 | |
*4947adContextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si4947ady2002/95/ecsi4947ady-t1-e3si4947ady-t1-ge3+3 | |
si4916Contextual Info: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V |
Original |
si4916dysi4916dy-t1-e3si4916dy-t1-ge32011/65/eu+3 | |
si9945b
Abstract: SI9945BDY SI9945BDY-T1-GE si9945bd
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Original |
si9945bdysi9945bdy-t1-ge32011/65/eu2002/95/ec+4 | |
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Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
Original |
si4953ady2002/95/ecsi4953ady-t1-e3si4953ady-t1-ge3+2 | |
vk marking 6 pin ic
Abstract: iso 9141 si9243a
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Original |
si9243asi9243aey2011/65/eu2002/95/ec+3 | |
Diode HER 507Contextual Info: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V |
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si4412dy2002/95/ecsi4412dy-t1-e3si4412dy-t1-ge3+3 | |
Si9407AEYContextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
Original |
si9407aey2002/95/ecsi9407aey-t1-e3si9407aey-t1-ge3+2 | |