SI4486EY Search Results

s0913

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4486EY

Contextual Info: SPICE Device Model Si4486EY N-Channel 100-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si4486EY

Abstract: Si4486EY-T1
Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.9 0.028 @ VGS = 6.0 V 7.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4486EY Si4486EY-T1 (with Tape and Reel)

SI4486EY

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.9 0.028 @ VGS = 6.0 V 7.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4486EY Si4486EY-T1 (with Tape and Reel)

SI4486EY

Contextual Info: Si4486EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 7.9 0.028 @ VGS = 6.0 V 7.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4486EY

Abstract: Si4486EY-T1-E3 Si4486EY-T1-GE3
Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4486EY

Abstract: 79A36
Contextual Info: SPICE Device Model Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4486EY-T1-E3

Abstract: Si4486EY Si4486EY-T1-GE3
Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4486EY-T1-E3

Abstract: Si4486EY
Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Maximum Junction Temperature: 175 °C Rated • High-Efficiency PWM Optimized D SO-8 S 1 8

Si4486EY

Contextual Info: SPICE Device Model Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4486EY

Contextual Info: SPICE Device Model Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4486EY

Abstract: Si4486EY-T1 Si4486EY-T1-E3
Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Maximum Junction Temperature: 175 °C Rated • High-Efficiency PWM Optimized Pb-free Available

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

VISHAY MARKING mosfet

Abstract: SI4486EY
Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Maximum Junction Temperature: 175 °C Rated • High-Efficiency PWM Optimized Pb-free Available

70357

Abstract: AN609 Si4486EY
Contextual Info: Si4486EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI4486EY

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

optocoupler pc 817

Abstract: GHM3045X7R222K-GC LT1006S8 optocoupler 817 LT1681 LTC1698 LTC1698EGN LTC1698ES LTC1698IGN LTC1698IS
Contextual Info: Electrical Specifications Subject to Change LTC1698 Secondary Synchronous Rectifier Controller U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1698 is a precision secondary-side forward converter controller that synchronously drives external

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

EFD15-3F3-A63S

Abstract: SMA capacitor TDK Ferrite Core EFD20 PS2501-1-L sanyo WG capacitors ceramic capacitor 1uf/100v-1210 Vitramon 10uh coilcraft 1210 LM5020 sanyo capacitor wg
Contextual Info: National Semiconductor LM5020 Power Applications Design Center, Americas May 2007 1.0 Design Specifications Inputs Output #1 Output #2 Output #3 Output #4 VinMin=9V Vout1=5V Vout2=12V Vout3=3.3V Vout4=5V VinMax=42V Iout1=0.2A Iout2=2.1A Iout3=0.5A Iout4=0.5A

LM4041C1M3

Abstract: EPC19 Zener diode 2.2X 1N4001 BAT54S Si9123 TSSOP-16 S-03639-Rev
Contextual Info: Si9123 New Product Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Control FEATURES D D D D D D 12-V to 72-V Input Voltage Range D Compatible with ETSI 300 132-2 100 V, 100-ms Transients D Integrated Half-Bridge 1-A Primary Drivers

LEP-9080

Abstract: capacitor 30 mf EPC19 FZT953 Si9122 Si9122DQ-T1 SOIC-20 TSSOP-20 si4886dy
Contextual Info: Si9122 Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Drivers FEATURES D Advanced Maximum Current Control During Start-Up and Shorted Load D Low Input Voltage Detection D Programmable Soft-Start Function

EPC19

Abstract: CS19-12 Si9122 Si9122DQ-T1 TSSOP-20 AD8206
Contextual Info: Si9122 Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Drivers FEATURES D Frequency Foldback Eliminates Constant Current Tail D Advanced Maximum Current Control During Start-Up and Shorted Load D Low Input Voltage Detection

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455