INDIUM Search Results

Contextual Info: Agilent Radiometrically Tested AlInGaP II LED Lamps for Sensor-Based Applications Data Sheet SunPower Series Precision Optical Performance HLMP-ED80-xxxxx Description Radiometrically Tested Precision Optical Performance AlInGaP II aluminum indium gallium

LPD200P70-2

Abstract: LPD200-P70-2 LPD200P70 LPD200-P70-1 LPD200 MIL-HDBK-263 maximum idss transistor Indium LPD200-P70
Contextual Info: LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

Contextual Info: VISIBLE LED LAMPS Super flux Page 1 of 1 SMx28W series Package Features 0.76 ±0.1 x 0.4 ±0.2 2.5 1.55 ±0.2 CATHODE High luminous output through Indium technology 7.62 ±0.5 Wide viewing angle ø3.0 ±0.2 5.08 ±0.3 0.5 Water clear lens 5.08 1.9 7.62 ±0.5

MVL-904UYL

Abstract: DSA003696
Contextual Info: Super Flux LEDS MVL-904UYL Description Package Dimensions Unit: mm inches The MVL-904UYL , utilizes the latest absorbing subsstrate aluminum indium gallium phosphide AlInGap LED technology. This LED material has outstanding light output efficiency over a wide range of drive current. The package

circuit diagram of moving LED message display

Abstract: MVL-663UOLK-S
Contextual Info: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663UOLK-S Description Package Dimensions The MVL-663UOLK-S , utilizes the latest absorbing Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material

MVL-914UYL

Abstract: MVL-914UYLK DSA003696
Contextual Info: Super Flux LEDS MVL-914UYL Description Package Dimensions Unit: mm inches The MVL-914UYLK , utilizes the latest absorbing subsstrate aluminum indium gallium phosphide AlInGap LED technology. This LED material has outstanding light output efficiency over a wide range of drive current. The package

MVL-504UOL

Contextual Info: T-1 3/4 5mm PACKAGE HIGH POWER AlInGaP LED LAMPs Description MVL-504UOL Package Dimensions The MVL-504UOL utilizes the latest absorbing Unit: mm ( inches ) φ5.05 (.200) substrate Aluminum Indium Gallium Phosphide (AlInGaP) LED technology. This LED material

J23-5I-R02M-2

Abstract: J23TE2-66G-R01M-2 50E-12 39E-15 56E-11 21E12 18E-14 13E12 56E14 J22-18I-R40U
Contextual Info: Indium Gallium Arsenide Detectors ISO 9001 Certified Distributor: LASER COMPONENTS GmbH, Germany, Phone: +49 0 8142 28640, E-Mail: info@lasercomponents.com J22 and J23 Detector Operating Notes (0.8 to 2.6 µm) General The J22 and J23 series are high performance InGaAs detectors

J23-5I-R02M-2

Abstract: J23TE2-66C-R02M-2 39E-15 J22-5I-R02M J22-18i-R01M
Contextual Info: Indium Gallium Arsenide Detectors Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.judsontechnologies.com J22 and J23 Detector Operating Notes 0.8 to 2.6 µm

HSMA-C197

Abstract: AV01-0520EN HSMC-C197
Contextual Info: HSMx-C120, HSMx-C177, HSMx-C197 and HSMx-C265 High Performance Chip LEDs Data Sheet Description Features These chip type LEDs utilize Aluminium Indium Galium Phosphide AlInGaP material technology. The AlInGaP material has a very high luminous efficiency, capable of

MVL-534UYL

Contextual Info: T-1 3/4 φ5mm High Performance AllnGaP LED Lamps Description MVL-534UYL Package Dimensions The MVL-534UYL , utilizes the latest absorbing φ5.05 (.200) substrate Aluminum Indium Gallium Phosphide Unit: mm ( inches ) (AllnGaP) LED technology. This LED material

MVL-663TUYLK-S

Contextual Info: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps Description MVL-663TUYLK-S Package Dimensions The MVL-663TUYLK-S, utilizes the latest transparent Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material

Contextual Info: [CQ-2235] CQ-2235 High-Speed Small Current Sensor 1. Genaral Description CQ-2235 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,

Contextual Info: [CQ-2334] CQ-2334 High-Speed Small Current Sensor 1. Genaral Description CQ-2334 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,

785nm

Abstract: LD chip optical discs United Epitaxy Company
Contextual Info: UEL-H78 國 聯 光 電 科 技 United Epitaxy Company, Ltd. Preliminary Product Description: Essential: 780nm Laser Chip AlGaInP/GaAs MOVPE Process Strained MQW UEL-H78 is a 780nm infrared high power LD chip fabricated from aluminum gallium indium phosphide AlGaInP

12065A104JAT2A

Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Contextual Info: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •

MVL-514UYL

Contextual Info: T-1 3/4 φ 5mm High Performance AllnGaP LED Lamps Description MVL-514UYL Package Dimensions Unit: mm ( inches ) The MVL-514UYL , utilizes the latest absorbing substrate aluminum indium gallium phosphide (AllnGaP) LED technology. This LED material has outstanding light output efficiency over

MVL-504UOL

Contextual Info: T-1 3/4 φ 5mm PACKAGE HIGH POWER AlInGaP LED LAMPs Description MVL-504UOL Package Dimensions Unit: mm ( inches ) The MVL-504UOL utilizes the latest absorbing substrate Aluminum Indium Gallium Phosphide (AlInGaP) LED technology. This LED material has outstanding light output efficiency over a

Contextual Info: Agilent HSMx-C110/170/190/C191/C150 High Performance ChipLED Data Sheet HSMA-C110/C170/C190/C191/C150 HSML-C110/C170/C190/C191/C150 HSMC-C110/C170/C190/C191/C150 HSMZ-C110/C170/C190 Description These chip-type LEDs utilize Aluminum Indium Gallium Phosphide

Contextual Info: Agilent HSMx-C110/170/190/C191/C150 High Performance ChipLED Data Sheet HSMA-C110/C170/C190/C191/C150 HSML-C110/C170/C190/C191/C150 HSMC-C110/C170/C190/C191/C150 HSMZ-C110/C170/C190 Description These chip-type LEDs utilize Aluminum Indium Gallium Phosphide

J12TE4-3CN-R01M

Abstract: J12TE3-66D-R01M HgCdTe J12TE2-66D-R02M J12TE1-37S-R01M J12-18C J12TE3-66D-R250U judson PA-9 J12TE3 J12TE2-66D-R01M
Contextual Info: J}^EGsG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 ¡am General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon­

Contextual Info: Agilent Precision Optical Performance AlInGaP II LED Lamps Data Sheet HLMP-ELxx HLMP-EHxx HLMP-EDxx Description Precision Optical Performance AlInGaP II aluminum indium gallium phosphide LEDs offer superior light output for excellent readability in sunlight

Model 430

Abstract: SH-430
Contextual Info: 16 Indium Antimonide SH Series Hall Sensors Description The SH series Hall effect sensors are four terminal Indium Antimonide devices that are extremely sensitive to low magnetic fields. These devices produce an output voltage, Vh, proportional to the product of the input current, Ic, and the magnetic flux density, B.

LED traffic light signs

Abstract: LED traffic light signs technical data LED traffic light vms LED traffic light Hewlett-Packard amber LED chips
Contextual Info: hH Projection of Long Term Light Output Performance for AS AlInGaP LED Technology Application Brief I-007 Long Term Light Output Performance is Different than MTBF The long term reliability of AS AlInGaP absorbing substrate, aluminum-indium-gallium-phosphide LEDs is an important