SI4850EY Search Results

SI4850EY-t1g

Abstract: si4850
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4850EY

Abstract: Si4850EY-T1
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4850EY Si4850EY-T1 (with Tape and Reel)

Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4850EY

Abstract: Si4850EY-T1 Si4850EY-T1-E3 60425
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • 175 °C Rated Maximum Junction Temperature • TrenchFET Power MOSFETs Pb-free

Si4850EY

Abstract: Si4850EY-T1 Si4850EY-T1-E3 us50-24
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • 175 °C Rated Maximum Junction Temperature • TrenchFET Power MOSFETs Pb-free

Contextual Info: SPICE Device Model Si4850EY www.vishay.com Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si4850EY-E3

Abstract: 40572 Si4850EY-T1-E3 Si4850EY Si4850EY-T1
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4850EY Si4850EY—E3 (Lead Free)

si4850

Contextual Info: Si4850EY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4850EY

Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4850EY

Contextual Info: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4850EY Si4850EY—E3 (Lead Free)

Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

74113

Abstract: SI4850EY AN609 34721
Contextual Info: Si4850EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

175C

Abstract: Si4850EY
Contextual Info: SPICE Device Model Si4850EY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

Si4850EY

Contextual Info: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4850EY

Abstract: Si4850EY-T1-E3 Si4850EY-T1-GE3
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4850EY

Abstract: Si4850EY-T1 Si4850EY-T1-E3
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • 175 °C Rated Maximum Junction Temperature • TrenchFET Power MOSFETs Pb-free

SI4850EY

Abstract: Si4850EY SPICE Device Model
Contextual Info: SPICE Device Model Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4850EY-T1-E3

Abstract: Si4850EY Si4850EY-T1-GE3
Contextual Info: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si4850EY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

mathcad SEPIC

Abstract: Input voltage 40V Output voltage 13.8V mathcad forward converter design SNVS480E mathcad INDUCTOR DESIGN LM5022 Low Side Controller for Boost and SEPIC si4850 SLF12575T-M3R2
Contextual Info: LM5022 LM5022 60V Low Side Controller for Boost and SEPIC Literature Number: SNVS480E LM5022 60V Low Side Controller for Boost and SEPIC General Description Features The LM5022 is a high voltage low-side N-channel MOSFET controller ideal for use in boost and SEPIC regulators. It contains all of the features needed to implement single ended

Contextual Info: User's Guide SLVU304C – April 2009 – Revised November 2011 TPS23754EVM-383 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-383 . TPS23754EVM-383 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant

016W

Abstract: LM3430 LM3430SD LM3430SDX LM3432 mathcad boost SLF7045T-470M90-1P SLF7045T-470M90-1PF capacitor 470 uf 100v
Contextual Info: LM3430 Boost Controller for LED Backlighting General Description Features The LM3430 is a high voltage low-side N-channel MOSFET controller. Ideal for use in a boost regulator, the LM3430 can power the LED backlight in LCD panels, such as in notebook PCs. It contains all of the features needed to implement single

Contextual Info: SM74203 www.ti.com SNOSB97A – AUGUST 2011 – REVISED APRIL 2013 60V Low Side Controller for Boost and SEPIC Check for Samples: SM74203 FEATURES DESCRIPTION • • • • • • • • • • • • The SM74203 is a high voltage low-side N-channel