SI4484EY Search Results

Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4484EY

Contextual Info: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4484EY

Contextual Info: Si4484EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4484EY

Contextual Info: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74107

Abstract: 74107 data sheet AN609 Si4484EY
Contextual Info: Si4484EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI4484EY

Contextual Info: Si4484EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4484EY

Abstract: Si4484EY-T1
Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel)

Si4484EY-T1-E3

Abstract: Si4484EY Si4484EY-T1-GE3
Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Si4484EY

Abstract: Si4484EY-T1
Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel)

Si4484EY

Contextual Info: SPICE Device Model Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4484EY

Abstract: Si4484EY-T1
Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel)

Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

Contextual Info: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

PA2454NL

Abstract: CDEP145-4R2 12v in 48v out fuel injector controller Mark Alexander A Current Feedback Audio Power Amp hybrid car charger inverter schematic diagram GRM033R60J104 schematic diagram car alternator built en voltage stepup ferrite transformer 24V to 2KV LTC3862 PA2467NL
Contextual Info: LINEAR TECHNOLOGY JANUARY 2009 IN THIS ISSUE… COVER ARTICLE 2-Phase, Non-Synchronous Boost Controller Simplifies Design of High Voltage, High Current Supplies .1 Muthu Subramanian and Tick Houk Linear in the News… .2

vishay zener diode 1A 30v

Abstract: LM4041CYM3-ADJ VJ0603Y102KXAMT C3216X7R1H106 grm32df51h106za01 VJ0805Y102KXAMT shunt R010 BC846AMTF CDR7D43MN-4R7NC BC846A
Contextual Info: MIC2196 LED Driver Evaluation Board Boost LED Driver w/PWM DIM Control General Description The MIC2196 current mode boost controller is used to implement a LED Driver with PWM DIM control Figure 1 . The LED series string is pulsed on and off by the PWM DIM input signal to provide true PWM dimming. When

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

IRFR3411

Abstract: 3F smd transistor AN-7516 fdd3682 IRF540NS Si4484EY TPS2490 TPS2491 mosfet SOA testing Fairchild presentation
Contextual Info: Application Report SLVA158 – July 2004 Hotswap Design using TPS2490/91 and MOSFET Transient Thermal Response Martin Patoka PMP Systems Power ABSTRACT Hotswap circuits rely on the thermal capacitance of the series-limiting MOSFET to dissipate the large transient energy under current- or power-limit operation. The peak

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no