IRFR3411 Search Results

AN-994

Abstract: IRFR120 IRFR3411 IRFU120 IRFU3411 U120 4.5v to 100v input regulator
Contextual Info: PD - 95371A l l l l l l l IRFR3411PbF IRFU3411PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description

AN-994

Abstract: IRFR120 IRFR3411 IRFU120 IRFU3411
Contextual Info: PD - 94393 l l l l l l IRFR3411 IRFU3411 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 95371B l l l l l l l IRFR3411PbF IRFU3411PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description

AN-994

Abstract: EIA-541 IRFR120 IRFU120 U120 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 95371B l l l l l l l IRFR3411PbF IRFU3411PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description

4.5V TO 100V INPUT REGULATOR

Contextual Info: PD - 95371 l l l l l l l IRFR3411PbF IRFU3411PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description

U120

Abstract: AN-994 IRFR120 IRFR3411 IRFU120 IRFU3411 4.5v to 100v input regulator
Contextual Info: PD - 95371A l l l l l l l IRFR3411PbF IRFU3411PbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description

Contextual Info: IRFR3411PBF IRFU3411PBF D-Pak IRFR3411 l l l l l l l I-Pak IRFU3411 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description D The D-Pak is designed for surface mounting using vapor

Contextual Info: PD - 94393 l l l l l l IRFR3411 IRFU3411 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description Advanced HEXFET® Power MOSFETs from International

AN-994

Abstract: IRFR120 IRFR3411 IRFU120 IRFU3411 IRFR341
Contextual Info: PD - 94393 l l l l l l IRFR3411 IRFU3411 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 44mΩ G Description Advanced HEXFET® Power MOSFETs from International

SOT-224

Abstract: IRF540NPBF IRF1010E IRFZ44NPBF IRLL024NPBF IRFL014NTRPBF IRF7478T irfp4710 sot224 irfp044npbf
Contextual Info: 1966-2012:QuarkCatalogTempNew 9/18/12 3:29 PM Page 1966 25 TEST & MEASUREMENT Power MOSFETs Continued INTERCONNECT Power MOSFETs N Channel, 55 Volt VDSS RoHS ASSEMBLY SEMICONDUCTORS OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES TO-220AB D2-PAK INDEX

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

IRFR3411

Abstract: 3F smd transistor AN-7516 fdd3682 IRF540NS Si4484EY TPS2490 TPS2491 mosfet SOA testing Fairchild presentation
Contextual Info: Application Report SLVA158 – July 2004 Hotswap Design using TPS2490/91 and MOSFET Transient Thermal Response Martin Patoka PMP Systems Power ABSTRACT Hotswap circuits rely on the thermal capacitance of the series-limiting MOSFET to dissipate the large transient energy under current- or power-limit operation. The peak

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB