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    SI2338DS Search Results

    SI2338DS Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2338DS-T1-BE3
    		Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET Original PDF 251.13KB 10
    SI2338DS-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 6A SOT23 Original PDF 250.19KB
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    SI2338DS Price and Stock

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    Vishay Intertechnologies SI2338DS-T1-GE3

    Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R
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    Verical SI2338DS-T1-GE3 2,393 162
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    Avnet Americas () SI2338DS-T1-GE3 Ammo Pack 1
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    SI2338DS-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI2338DS-T1-GE3 81
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    Newark () SI2338DS-T1-GE3 Cut Tape 2,764 1
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    SI2338DS-T1-GE3 Tape & Reel 2,764 10
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    SI2338DS-T1-GE3 Tape & Reel 3,000
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    SI2338DS-T1-GE3 Tape & Reel 3,000
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    TME SI2338DS-T1-GE3 2,393 1
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    Avnet Asia SI2338DS-T1-GE3 54 Weeks 3,000
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    EBV Elektronik SI2338DS-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI2338DS-T1-BE3

    Power MOSFET, N Channel, 30 V, 6 A, 28 MilliOhms, TO-236 (SOT-23), 3 Pins, Surface Mount - Tape and Reel (Alt: SI2338DS-T1-BE3)
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    Avnet Americas SI2338DS-T1-BE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI2338DS-T1-BE3 271
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    Newark SI2338DS-T1-BE3 Cut Tape 1
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    TTI SI2338DS-T1-BE3 Reel 21,000 3,000
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    EBV Elektronik SI2338DS-T1-BE3 53 Weeks 3,000
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    Vishay Intertechnologies SI2338DS-T1-GE3.

    Pwr Mosfet, N Channel, 30V, 6A; |Vishay SI2338DS-T1-GE3.
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    Newark SI2338DS-T1-GE3. Tape & Reel 3,000
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    Vishay Siliconix SI2338DS-T1-GE3

    SI2338DS-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 6 A, 30 V, 3-PIN SOT-23
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    RS SI2338DS-T1-GE3 Bulk 3,000
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    Vishay Huntington SI2338DS-T1-GE3

    MOSFET N-CH 30V 6A SOT23
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    Win Source Electronics SI2338DS-T1-GE3 30,000
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    SI2338DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si2338DS

    Contextual Info: SPICE Device Model Si2338DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		si2338ds2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Si2338DS

    Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2338ds2002/95/ecot-23si2338ds-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    si2338

    Abstract: Si2338DS
    Contextual Info: SPICE Device Model Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si2338ds11-mar-11si2338 PDF

    Si2338DS

    Abstract: si2338 marking code vishay SILICONIX sot-23 si23
    Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2338dsot-232002/95/ecsi2338ds-t1-ge3+52011/65/eu12-mar-12si2338marking code vishay siliconix sot-23si23 PDF

    si2338

    Abstract: Si2338DS
    Contextual Info: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2338dsot-232002/95/ecsi2338ds-t1-ge3+211-mar-11si2338 PDF

    Si2338DS

    Contextual Info: Si2338DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si2338ds-ge3an6095622u5465m+77219m5524u6375m9483m7920m10-may-11si2338ds PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF