S11000 Search Results

S11074

Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
Contextual Info: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

2AM154P1002

Abstract: 2AM154P1002-1-H
Contextual Info: VrioCTiciotno^—>5 odbjoodbodB| H0I0HHE1E10E1E1E] HE1E1E10E10IEE1E1E] H i] 0 0 0 0 0 0 0 0 0 liiiiilllii liiililllii S1100000[liB 0 0 0 0 0 0 0 0 0 1 1 ^ 3 25 24 23 22 21 2D 19 IB 17 16 15 liiiiiiiaiE iiE ii 1 1 1 0 S B 7 6 5 4 3 Z 1 NOTES MATERIAL: A1\HOUSING:

commscope 489ACA1-050

Abstract: commscope 489ACA1-100 NSC-100 110ana1 110ANA1-06 489ACC1-025 189ecs1-50 1890ECS1-100 commscope cross reference R3B1E
Contextual Info: Cross Ref. Competitors Cross Reference Guide This guide has been added to our catalogue as a reference tool for you, our customer. The guide is to be utilized as a resource only and we strongly recommend you turn to the specific product page for exact specifications. The guide below and on the following pages is referenced mainly on an operational basis.

Sussex Semiconductor

Abstract: rectifier diode piv table 1N647 s16 transistor 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
Contextual Info: .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

S25400

Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. RECTIFIER DIE 7 7 .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE

lh51100

Abstract: lh511000
Contextual Info: PRELIMINARY LH511000UL C M O S 1M 1 2 8 K x 8 S ta tic R A M FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH511000UL is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times:

Contextual Info: Prelim inary F U JIT S U MOS Memories • M B 8 1 1 0 0 0 - 1 2 , M B 8 1 1 0 0 0 - 1 5 1,048,576-Bit Dynamic Random Access Memory D es c rip tio n The Fujitsu MB811000 is a fully decoded, dynamic NMOS random access memory organized as 1,048,576 one-bit words. The design

100 Amp current 1000 volt diode

Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
Contextual Info: .25 TO 100 AMP FAST AND ULTRA-FAST RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED FAST AND ULTRA-FAST RECOVERY DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

511000

Abstract: 511000A 511000A-70 20-PIN 26-PIN MSM511000A-70 MSM OKI 511000a-80
Contextual Info: SflE D O K I O K I • b 7 2 4 2 4 0 0 0 1 2 7 5 5 TST « O K I J S E M I C O N D U C T O R GROUP s e m i c o n d u c t o r " T - % - z . 2> - is - M S M 5 1 1 0 0 0 A 1,048,576-WQRD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 5110OOA is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

ic 74hc245

Abstract: M68HC11evm IC 74HC00 eeprom copy schematic 27128 6264 ram IC 74hc74 XC68HC11A1FN MC68HC11E1FN ic 6264 E02F EEPROM
Contextual Info: M68HC11EVM/AD8 February 1994 M68HC11EVM EVALUATION MODULE USER’S MANUAL Information contained in this document applies to REVision G M68HC11EVM Evaluation Modules, serial numbers 1000 through 9999. Copyright 1989, 1994 by Motorola Inc. Motorola reserves the right to make changes without further notice to any products herein to

BSM25GD100D

Abstract: C67076-A2501-A2 KS2500 BSM25GD-100 BSM25GD100
Contextual Info: bOE J> • 0 E 3 S b G S D Q 4 S Ô 2 4 31 3 « S I E G SIEMENS SI EM EN S A K T I E N 6 E S E L L S C H A F ~ T - 'Z 3 - IGBT Module BSM25GD100D Preliminary Data VCE = 1000 V I c = 6 x 3 5 A at r c = 25 C I c = 6 x 2 5 A at r c = 80 C • • • • •

DIODE 1N649

Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. DIES AND CELLS SECTION 7 SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE PAGE NUMBER 1. TRANSIENT SUPPRESSOR DIES

s16 transistor

Abstract: 1N5804 S25400 S3-400-150 S1-400-150 S1-600-150 S1-800-150 S3-100-150 51000200 S3-500-150
Contextual Info: .25 TO 100 AMP FAST AND ULTRA-FAST RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED FAST AND ULTRA-FAST RECOVERY DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

ic 6264

Abstract: M68HC11evm MC68HC11E1FN 6264 RAM eeprom copy schematic 27128 MC68HC811A2 ic 74hc245 MCM6064P eeprom programmer schematic 27128 ram 6264
Contextual Info: Freescale Semiconductor, Inc. M68HC11EVM/AD8 Freescale Semiconductor, Inc. February 1994 M68HC11EVM EVALUATION MODULE USER’S MANUAL Information contained in this document applies to REVision G M68HC11EVM Evaluation Modules, serial numbers 1000 through 9999.

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

BSM75GB100D

Abstract: siemens igbt IGBT 75 D BSM75 siemens igbt BSM 150 gb 100 d BSM75GAL100D GB1000 SIEMENS BST P S110 GB100D
Contextual Info: SIEM EN S B S M 7 5 G B 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data 1000 V Ic= 2 x 75 A / 1 x 75 A V ce • • • • • = Power module Half-bridge / Chopper Including fast free-wheel diodes Package with insulated metal base plate Package outline / Circuit diagram: 2b, 2c1

S25400

Abstract: se 140 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 S4020 1N5402
Contextual Info: .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED STANDARD RECOVERY FLIP-DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

Contextual Info: SIEMENS BSM 50 GB 120 D BSM 50 GAL 120 D IGBT Module Preliminary Data V CE = 1200 V J c = 2 x 70 A at r c = 2 5 C / c = 2 x 50 A at T c = 80 C • • • • • Power module H alf-bridge/Chopper Including fast free-w heel diodes Package with insulated m etal base plate

s16 transistor

Abstract: 1N4006 1N4007 1N5402 1N645 1N647 1N4001 1N4002 1N4003 1N4004
Contextual Info: .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

S100-600

Abstract: 100 Amp current 1000 volt diode diode 1N5408 specifications 1n5408n Sussex Semiconductor 1N649 s16 transistor 1N4002 1N4003 1N4005
Contextual Info: .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 GLASS PASSIVATED STANDARD RECOVERY FLIP-DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

R65C52

Abstract: HC11EVS x0304 J15Jumper HC11EVSOM/D
Contextual Info: HC11EVSOM/D FEBRUARY 1995 HC11EVS EVALUATION SYSTEM OPERATIONS MANUAL MOTOROLA Inc., 1994, 1995; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. Motorola does not assume any liability arising out of the